TY  - JOUR
AU  - Flege, Jan Ingo
AU  - Kaemena, Björn
AU  - Schmidt, Thomas
AU  - Falta, Jens
TI  - Epitaxial, well-ordered ceria/lanthana high-k gate dielectrics on silicon
JO  - Journal of vacuum science & technology / B
VL  - 32
IS  - 3
SN  - 0734-211X
CY  - New York, NY
PB  - Inst.
M1  - PUBDB-2014-04169
SP  - 03D124
PY  - 2014
AB  - It is shown that the growth of epitaxial lanthana films on silicon may be achieved by substrate prepassivation using an atomic layer of chlorine, which prevents silicon oxide and silicate formation at the oxide–silicon interface. Postdeposition of two layers of cerium oxide facilitates the healing of structural defects within the La2O3 film, strongly increasing its crystallinity at the expense of a slightly more oxidized interfacial layer below. Together, the approach of combining Cl prepassivation and the ceria overgrowth results in an epitaxial, high-quality ceria/lanthana gate stack suitable for high-k integration in a gate-last process.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000337061900024
DO  - DOI:10.1116/1.4876122
UR  - https://bib-pubdb1.desy.de/record/192587
ER  -