Journal Article

DESY-2014-01858

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Variation of strain in granular GaAs:MnAs layers

Bak-Misiuk, J. (Corresponding author)Extern* ; Romanowski, P.Extern* ; Dynowska, E.Extern* ; Sadowski, J. ; Misiuk, A. ; Caliebe, W.DESY*

2013
MAIK "Nauka/Interperiodica" Woodbury, NY

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Please use a persistent id in citations: doi:10.1134/S1063774513070043

Abstract: Granular GaAs(MnAs) layers with different Mn concentration and various layer thickness were grown by MBE method and subjected to annealing at 500°C under ambient and enhanced hydrostatic pressure. Distinct influence of hydrostatic pressure applied during annealing on strain state of layers as well as on hexagonal MnAs inclusions was found. Pressure induced strain of inclusions is related to different bulk moduli of GaAs and of hexagonal MnAs. Formation of hexagonal inclusions depends on concentration of Mn in interstitial position in as-grown samples.

Note: © Pleiades Publishing, Inc.; Post referee fulltext in progress

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Contributing Institute(s):

1. DOOR-User (DOOR)
2. FS-Experimentebetreuung DORIS (FS-DO)

Research Program(s):

1. DORIS Beamline W1 (POF2-54G13) (POF2-54G13)

Experiment(s):

1. DORIS Beamline W1 (DORIS III)

Appears in the scientific report 2013

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Database coverage:
JCR ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection ; Zoological Record

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