TY  - JOUR
AU  - Bak-Misiuk, J.
AU  - Romanowski, P.
AU  - Dynowska, E.
AU  - Sadowski, J.
AU  - Misiuk, A.
AU  - Caliebe, W.
TI  - Variation of strain in granular GaAs:MnAs layers
JO  - Crystallography reports
VL  - 58
IS  - 7
SN  - 1562-689X
CY  - Woodbury, NY
PB  - MAIK "Nauka/Interperiodica"
M1  - DESY-2014-01858
SP  - 998 - 1001
PY  - 2013
N1  - © Pleiades Publishing, Inc.; Post referee fulltext in progress
AB  - Granular GaAs(MnAs) layers with different Mn concentration and various layer thickness were grown by MBE method and subjected to annealing at 500°C under ambient and enhanced hydrostatic pressure. Distinct influence of hydrostatic pressure applied during annealing on strain state of layers as well as on hexagonal MnAs inclusions was found. Pressure induced strain of inclusions is related to different bulk moduli of GaAs and of hexagonal MnAs. Formation of hexagonal inclusions depends on concentration of Mn in interstitial position in as-grown samples.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000329101900009
DO  - DOI:10.1134/S1063774513070043
UR  - https://bib-pubdb1.desy.de/record/167516
ER  -