Journal Article

PUBDB-2017-03940

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Radiation damage in PIN-photodiodes

Wittenburg, K. (Corresponding author)DESY*

1988
North-Holland Publ. Co. Amsterdam

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Please use a persistent id in citations: doi:10.1016/0168-9002(88)90008-3

Abstract: The investigations of radiation damages to Si-PIN-photodiodes are done in view of their applicability as beam loss monitors for the HERA p-ring. The results indicate that photodiodes can withstand doses of 5×10$^3$ Gy without any problems, except a small increase of dark currents. Therefore, these diodes could be used as loss monitors in HERA for several years.

Note: M-Bereich

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Contributing Institute(s):

1. DESY Retrocat (DESY(-2012))

Research Program(s):

1. 899 - ohne Topic (POF3-899) (POF3-899)

Experiment(s):

1. No specific instrument

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Database coverage:
; Current Contents - Engineering, Computing and Technology ; Current Contents - Physical, Chemical and Earth Sciences ; Ebsco Academic Search ; IF < 5 ; JCR ; NCBI Molecular Biology Database ; Nationallizenz ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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