TY  - JOUR
AU  - Wittenburg, Kay
TI  - Radiation damage in PIN-photodiodes
JO  - Nuclear instruments & methods in physics research / A
VL  - 270
IS  - 1
SN  - 0168-9002
CY  - Amsterdam
PB  - North-Holland Publ. Co.
M1  - PUBDB-2017-03940
SP  - 56 - 61
PY  - 1988
N1  - M-Bereich
AB  - The investigations of radiation damages to Si-PIN-photodiodes are done in view of their applicability as beam loss monitors for the HERA p-ring. The results indicate that photodiodes can withstand doses of 5×10<sup>3</sup> Gy without any problems, except a small increase of dark currents. Therefore, these diodes could be used as loss monitors in HERA for several years.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:A1988P121900007
DO  - DOI:10.1016/0168-9002(88)90008-3
UR  - https://bib-pubdb1.desy.de/record/323589
ER  -