| Home > Authorities > Periodicals > Journal of vacuum science & technology / B |
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| Common abbreviations:JVTBD9 [DE-600] J. Vac. Sci. Technol. B [DE-600] J Vac Sci Technol B Microelectron Nanometer Struct Process Meas Phenom [iso] J Vac Sci Technol B Microelectron Nanometer Struct Process Meas Phenom [dnlm] J Vac Sci Technol B Microelectron Nanometer Struct Process Meas Phenom [iso] J Vac Sci Technol B Nanotechnol Microelectron [dnlm] J Vac Sci Technol B Nanotechnol Microelectron [iso] | |
| Type: | journal |
| DDC: | 530 |
| Keywords(s): | Halbleitertechnologie, Zeitschrift, Online-Ressource, Dünnschichttechnik, Zeitschrift, Online-Ressource, Vakuumphysik, Zeitschrift, Online-Ressource, General Engineering, Materials Chemistry, Electrical and Electronic Engineering, Surfaces, Coatings and Films, Process Chemistry and Technology, Instrumentation, Electronic, Optical and Magnetic Materials |
| ISSN(s): | 0734-211X, 2166-2746, 2166-2754, 2327-9877 |
| Publisher: | Inst. : New York, NY 1983-1990 |
| Country: | United States of America |
| Appears: | online, print, data medium |
| ID: | PERI:(DE-600)1475429-0 |
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Journal Article
Fiber Tip-Based Electron Source
Journal of vacuum science & technology / B 33(3), 03C101 - (2015) [10.1116/1.4902016]
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Journal Article
Field Emission Beam Characteristics of Single Metal Nanotip Cathodes with On-Chip Collimation Gate Electrode
Journal of vacuum science & technology / B 33(3), 03C111 - (2015) [10.1116/1.4913397]
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Journal Article
Epitaxial, well-ordered ceria/lanthana high-k gate dielectrics on silicon
Journal of vacuum science & technology / B 32(3), 03D124 (2014) [10.1116/1.4876122]
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Journal Article
On the role of Ti adlayers for resistive switching in HfO2-based metal-insulator-metal structures: Top versus bottom electrode integration
Journal of vacuum science & technology / B 29, 01AD02 - 01AD02-7 (2011) [10.1116/1.3536524]
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Journal Article
X-ray investigation of buried SiGe islands for devices with strain-enhanced mobility
International Conference on Nanoscience and Technology, ICN+T 2008, KeystoneKeystone, Colorado /USA, 20 Jul 2008 - 25 Jul 2008
Journal of vacuum science & technology / B 27, 912-918 (2009) [10.1116/1.3056178]
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Journal Article
Optimized fabrication of silicon nanofocusing x-ray lenses using deep reactive ion etching
Journal of vacuum science & technology / B 25(5), 1626 - (2007) [10.1116/1.2769361]
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Journal Article
$\mathrm{Eu^{3+}}$-activated silica prepared by the alkoxide sol–gel method
Journal of vacuum science & technology / B 18(2), 1097 - 1100 (2000) [10.1116/1.591337]
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Journal Article
ZnSe/CdTe/ZnSe heterostructures
Journal of vacuum science & technology / B 18(4), 2263 - (2000) [10.1116/1.1305921]
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Journal Article
New insights on SiGe growth instabilities
Journal of vacuum science & technology / B 16(3), 1582 (1998) [10.1116/1.589943]
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All known publications ...
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