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Journal of vacuum science & technology / B: JVST ; the official journal of the American Vacuum Society: Microelectronics processing and phenomena

Common abbreviations:
JVTBD9 [DE-600]
J. Vac. Sci. Technol. B [DE-600]
J Vac Sci Technol B Microelectron Nanometer Struct Process Meas Phenom [iso]
J Vac Sci Technol B Microelectron Nanometer Struct Process Meas Phenom [dnlm]
J Vac Sci Technol B Microelectron Nanometer Struct Process Meas Phenom [iso]
J Vac Sci Technol B Nanotechnol Microelectron [dnlm]
J Vac Sci Technol B Nanotechnol Microelectron [iso]

Type:journal
DDC:530
Keywords(s): Halbleitertechnologie, Zeitschrift, Online-Ressource, Dünnschichttechnik, Zeitschrift, Online-Ressource, Vakuumphysik, Zeitschrift, Online-Ressource, General Engineering, Materials Chemistry, Electrical and Electronic Engineering, Surfaces, Coatings and Films, Process Chemistry and Technology, Instrumentation, Electronic, Optical and Magnetic Materials
ISSN(s): 0734-211X, 2166-2746, 2166-2754, 2327-9877
Publisher: Inst. : New York, NY 1983-1990
Country: United States of America
Appears:online, print, data medium
ID: PERI:(DE-600)1475429-0

Database coverage:
Medline ; Clarivate Analytics Master Journal List ; Current Contents - Electronics and Telecommunications Collection ; Current Contents - Engineering, Computing and Technology ; Current Contents - Physical, Chemical and Earth Sciences ; Essential Science Indicators ; IF < 5 ; JCR ; National-Konsortium ; PubMed Central ; SCOPUS ; Science Citation Index Expanded ; Web of Science Core Collection

Recent Publications

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Fiber Tip-Based Electron Source
Journal of vacuum science & technology / B 33(3), 03C101 - () [10.1116/1.4902016]  GO OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Field Emission Beam Characteristics of Single Metal Nanotip Cathodes with On-Chip Collimation Gate Electrode
Journal of vacuum science & technology / B 33(3), 03C111 - () [10.1116/1.4913397]  GO OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Epitaxial, well-ordered ceria/lanthana high-k gate dielectrics on silicon
Journal of vacuum science & technology / B 32(3), 03D124 () [10.1116/1.4876122]  GO  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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On the role of Ti adlayers for resistive switching in HfO2-based metal-insulator-metal structures: Top versus bottom electrode integration
Journal of vacuum science & technology / B 29, 01AD02 - 01AD02-7 () [10.1116/1.3536524]  GO BibTeX | EndNote: XML, Text | RIS

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X-ray investigation of buried SiGe islands for devices with strain-enhanced mobility
International Conference on Nanoscience and Technology, ICN+T 2008, KeystoneKeystone, Colorado /USA, 20 Jul 2008 - 25 Jul 20082008-07-202008-07-25 Journal of vacuum science & technology / B 27, 912-918 () [10.1116/1.3056178]  GO Embargoed OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Optimized fabrication of silicon nanofocusing x-ray lenses using deep reactive ion etching
Journal of vacuum science & technology / B 25(5), 1626 - () [10.1116/1.2769361]  GO BibTeX | EndNote: XML, Text | RIS

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$\mathrm{Eu^{3+}}$-activated silica prepared by the alkoxide sol–gel method
Journal of vacuum science & technology / B 18(2), 1097 - 1100 () [10.1116/1.591337]  GO  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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ZnSe/CdTe/ZnSe heterostructures
Journal of vacuum science & technology / B 18(4), 2263 - () [10.1116/1.1305921]  GO  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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New insights on SiGe growth instabilities
Journal of vacuum science & technology / B 16(3), 1582 () [10.1116/1.589943]  GO BibTeX | EndNote: XML, Text | RIS

All known publications ...
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 Record created 2012-07-12, last modified 2023-10-27


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