| Identifier | G:(DE-H253)I-20231120 |
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N‐Type Behavior from a P‐Type Dopant: Charge Compensation Mechanisms in Trivalent Y‐Doped HfO$_ 2$
Advanced physics research 5(1), e00120 (X) [10.1002/apxr.202500120]
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Long‐Term Stability and Oxidation of Ferroelectric AlScN Devices: An Operando Hard X‐ray Photoelectron Spectroscopy Study
Physica status solidi / Rapid research letters 19(3), 2400307 (2025) [10.1002/pssr.202400307]
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