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@ARTICLE{Rehm:622240,
      author       = {Rehm, Oliver and Baumgarten, Lutz and Guido, Roberto and
                      Düring, Pia Maria and Gloskovskii, Andrei and Schlueter,
                      Christoph and Mikolajick, Thomas and Schroeder, Uwe and
                      Mueller, Martina},
      title        = {{L}ong‐{T}erm {S}tability and {O}xidation of
                      {F}erroelectric {A}l{S}c{N} {D}evices: {A}n {O}perando
                      {H}ard {X}‐ray {P}hotoelectron {S}pectroscopy {S}tudy},
      journal      = {Physica status solidi / Rapid research letters},
      volume       = {19},
      number       = {3},
      issn         = {1862-6254},
      address      = {Weinheim},
      publisher    = {Wiley-VCH},
      reportid     = {PUBDB-2025-00278},
      pages        = {2400307},
      year         = {2025},
      abstract     = {Aluminum scandium nitride (Al1−xScxN) is a promising
                      material for ferroelectric devices due to its large remanent
                      polarization, scalability, and compatibility with
                      semiconductor technology. By doping AlN with Sc, the bonds
                      in the polar AlN structure are weakened, which enables
                      ferroelectric switching below the dielectric breakdown
                      field. However, one disadvantage of Sc doping is that it
                      increases the material's tendency toward oxidation. Herein,
                      the oxidation process of tungsten-capped and uncapped
                      Al0.83Sc0.17N thin films is investigated by hard X-ray
                      photoelectron spectroscopy (HAXPES). The samples is exposed
                      to air for either 2 weeks or 6 months. HAXPES spectra
                      indicate the replacement of nitrogen by oxygen and the
                      tendency of oxygen to favor oxidation with Sc rather than
                      Al. The appearance of an N2 spectral feature thus can be
                      directly related to the oxidation process. An oxidation
                      model that mimics these spectroscopic results of the
                      element-specific oxidation processes within Al1−xScxN is
                      presented. Finally, in operando HAXPES data of uncapped and
                      capped AlScN-capacitor stacks are interpreted using the
                      proposed model.},
      cin          = {DOOR ; HAS-User / FS-PET-S},
      ddc          = {530},
      cid          = {I:(DE-H253)HAS-User-20120731 /
                      I:(DE-H253)FS-PET-S-20190712},
      pnm          = {632 - Materials – Quantum, Complex and Functional
                      Materials (POF4-632) / 6G3 - PETRA III (DESY) (POF4-6G3) /
                      FS-Proposal: I-20231120 (I-20231120) / FS-Proposal:
                      I-20230416 (I-20230416) / DFG project G:(GEPRIS)458372836 -
                      Wurtzitische Mischkristalle als neue Materialklasse für
                      ferroelektrische Mikroelektronik (458372836)},
      pid          = {G:(DE-HGF)POF4-632 / G:(DE-HGF)POF4-6G3 /
                      G:(DE-H253)I-20231120 / G:(DE-H253)I-20230416 /
                      G:(GEPRIS)458372836},
      experiment   = {EXP:(DE-H253)P-P22-20150101},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:001370450800001},
      doi          = {10.1002/pssr.202400307},
      url          = {https://bib-pubdb1.desy.de/record/622240},
}