TY  - JOUR
AU  - Rehm, Oliver
AU  - Baumgarten, Lutz
AU  - Wunderwald, Florian
AU  - Fuhrberg, Andreas
AU  - Düring, Pia Maria
AU  - Gloskovskii, Andrei
AU  - Schlueter, Christoph
AU  - Mikolajick, Thomas
AU  - Schroeder, Uwe
AU  - Mueller, Martina
TI  - N‐Type Behavior from a P‐Type Dopant: Charge Compensation Mechanisms in Trivalent Y‐Doped HfO <sub>2</sub>
JO  - Advanced physics research
VL  - 5
IS  - 1
SN  - 2751-1200
CY  - Weinheim
PB  - Wiley-VCH GmbH
M1  - PUBDB-2026-00053
SP  - e00120
PY  - 2026
AB  - The current market launch of HfO <sub>2</sub> -based ferroelectric devices relies on the control of the inherent oxygen vacancies (OVs) and their impact on the ferroelectric performance. Due to the necessary stabilization of the ferroelectric phase by doping, several dopants are investigated for their applicability to control the vacancy concentration. Hf mathematical equation signatures in X-ray photoemission spectra are often used as an indication of OVs for both qualitative and quantitative analysis. The analysis of Y doped HfO <sub>2</sub> (Y:HfO <sub>2</sub>) as investigated by hard x-ray photoelectron spectroscopy (HAXPES) reveals the inapplicability of the Hf mathematical equation signature for a quantitative determination of OVs in the case of heterovalent doping and is restricted to pure HfO <sub>2</sub> or isoelectronic substitution of Hf by, for example, Zr. 
LB  - PUB:(DE-HGF)16
DO  - DOI:10.1002/apxr.202500120
UR  - https://bib-pubdb1.desy.de/record/643155
ER  -