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| Home > Publications database > Reverse current, capacitance and thermal runaway of irradiated silicon diodes |
| Master Thesis | PUBDB-2021-04447 |
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2021
Abstract: Silicon sensors are widely used in HEP experiments for particle tracking and calorimetry. One of the problems of silicon detectors is the increase of leakage current due to radiation damage. Leakage currents generate considerable heat for large detectors. At the same time, the leakage current increases with increasing sensor temperature.Therefore, catastrophic thermal runaway can occur with accumulated radiation damage during service in case of insufficient cooling performance.In order to estimate the effects, capacitance and current of irradiated silicon diodes have been measured as a function of particle fluence, temperature, bias voltage, cooling power and for diodes with different electrode sizes.The diodes were irradiated with 70 MeV/c protons and 1 MeV/c neutrons to equivalent fluences between $10^{13}$ $\text{cm}^{−2}$ and $5\cdot 10^{16}$ $\text{cm}^{−2}$. A parametrization to describe the reverse current of highly irradiated silicon sensors and an analytical model for thermal runaway were used to estimate the critical parameters. A setup was built to confront the model with measurements within its validity range. Runaway was achieved and the existing analytical model was tuned by using experimental data.The results can be applied to estimate the change of the heating power of silicon sensors in harsh radiation environments and the cooling infrastructure which is necessary to prevent thermal runaway in future ATLAS operation and other future detectors.
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