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@MASTERSTHESIS{Riemer:471495,
      author       = {Riemer, Felix},
      othercontributors = {Heiko, Lacker and Worm, Steven},
      title        = {{R}everse current, capacitance and thermal runaway of
                      irradiated silicon diodes},
      school       = {Humboldt-Universität zu Berlin},
      type         = {Masterarbeit},
      reportid     = {PUBDB-2021-04447},
      pages        = {87},
      year         = {2021},
      note         = {Masterarbeit, Humboldt-Universität zu Berlin, 2021},
      abstract     = {Silicon sensors are widely used in HEP experiments for
                      particle tracking and calorimetry. One of the problems of
                      silicon detectors is the increase of leakage current due to
                      radiation damage. Leakage currents generate considerable
                      heat for large detectors. At the same time, the leakage
                      current increases with increasing sensor
                      temperature.Therefore, catastrophic thermal runaway can
                      occur with accumulated radiation damage during service in
                      case of insufficient cooling performance.In order to
                      estimate the effects, capacitance and current of irradiated
                      silicon diodes have been measured as a function of particle
                      fluence, temperature, bias voltage, cooling power and for
                      diodes with different electrode sizes.The diodes were
                      irradiated with 70 MeV/c protons and 1 MeV/c neutrons to
                      equivalent fluences between $10^{13}$ $\text{cm}^{−2}$ and
                      $5\cdot 10^{16}$ $\text{cm}^{−2}$. A parametrization to
                      describe the reverse current of highly irradiated silicon
                      sensors and an analytical model for thermal runaway were
                      used to estimate the critical parameters. A setup was built
                      to confront the model with measurements within its validity
                      range. Runaway was achieved and the existing analytical
                      model was tuned by using experimental data.The results can
                      be applied to estimate the change of the heating power of
                      silicon sensors in harsh radiation environments and the
                      cooling infrastructure which is necessary to prevent thermal
                      runaway in future ATLAS operation and other future
                      detectors.},
      cin          = {$Z_ATUP$ / $Z_DET$ / HUB},
      cid          = {$I:(DE-H253)Z_ATUP-20210408$ / $I:(DE-H253)Z_DET-20201126$
                      / I:(DE-H253)HUB-20140108},
      pnm          = {622 - Detector Technologies and Systems (POF4-622)},
      pid          = {G:(DE-HGF)POF4-622},
      experiment   = {EXP:(DE-H253)LHC-Exp-ATLAS-20150101},
      typ          = {PUB:(DE-HGF)19},
      url          = {https://bib-pubdb1.desy.de/record/471495},
}