Journal Article

PUBDB-2020-00227

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Progress in detector properties of heteroepitaxial diamond grown by chemical vapor deposition on Ir/YSZ/Si(001) wafers

Berdermann, E. (Corresponding author) ; Afanaciev, K. ; Ciobanu, M. ; Fischer, M. ; Gsell, S. ; Kiš, M. ; Lagomarsino, S. ; Lohmann, W.DESY* ; Mayr, M. ; Pomorski, M. ; Rahman, M. S. ; Schmidt, C. J. ; Sciortino, S. ; Schreck, M. ; Stehl, C. ; Träger, M.

2019
Elsevier Science Amsterdam [u.a.]

This record in other databases:    

Please use a persistent id in citations: doi:10.1016/j.diamond.2019.05.006

Note: © Published by Elsevier B.V.; Final published version in progress; Post referee fulltext in progress; Embargo 12 months from publication

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Contributing Institute(s):

1. beauftragt von ZEU-SEK (ZEU-DLAB)

Research Program(s):

1. 632 - Detector technology and systems (POF3-632) (POF3-632)

Experiment(s):

1. Measurement at external facility

Appears in the scientific report 2019

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Database coverage:
; Clarivate Analytics Master Journal List ; Current Contents - Engineering, Computing and Technology ; Current Contents - Physical, Chemical and Earth Sciences ; Ebsco Academic Search ; IF < 5 ; JCR ; No Fulltext ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Web of Science Core Collection

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