Journal Article

PUBDB-2017-06149

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Pion and proton induced radiation damage to silicon detectors

Riechmann, K. ; Knoepfle, K.-T. (Corresponding author) ; Pugatch, V. M.

1996
North-Holland Publ. Co. Amsterdam

This record in other databases:        

Please use a persistent id in citations: doi:10.1016/0168-9002(95)01408-X

Abstract: We report on the radiation damage to silicon detectors at 25°C and 10°C induced by 190 MeV positively charged pions and 21 MeV protons. The deduced damage parameters and annealing time constants characterize the change of the diode leakage currents and full depletion voltages as a function of temperature and fluences. The results are relevant for the optimisation of the operating parameters of the HERA-B silicon vertex detector system.

Note: F-Bereich; HERA-B

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Contributing Institute(s):

1. DESY Retrocat (DESY(-2012))

Research Program(s):

1. 899 - ohne Topic (POF3-899) (POF3-899)

Experiment(s):

1. HERA: HERA-B

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Database coverage:
; Current Contents - Engineering, Computing and Technology ; Current Contents - Physical, Chemical and Earth Sciences ; Ebsco Academic Search ; IF < 5 ; JCR ; NCBI Molecular Biology Database ; Nationallizenz ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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