Conference Presentation (Invited)

PUBDB-2015-00452

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Electronic properties of nano-layer structured materials studied by hard X-ray photoelectron spectroscopy

Drube, W. (Corresponding Author)DESY*

2014

Abstract: Electronic properties of complex bulk materials, which often exhibit a modified surface electronic structure, and/or at buried interfaces of multi-nm layered samples are accessible by photoelectron spectroscopy using hard X-ray excitation in the multi keV range (HAXPES), where energetic photoelectrons emerge from deeper inside the material due to their significantly increased inelastic mean free paths. Because photoelectric cross sections rapidly decrease with photon energy above ionization thresholds, the use of brilliant and tunable undulator radiation at 3 rd generation synchrotron sources greatly enhances the effectiveness of this technique which is now emerging at storage ring facilities worldwide.HAXPES is a powerful tool for materials science applications as it allows to study as-grown multi-layered structures without a need for prior in-situ surface treatment or sensitive samples which need to be covered by protective capping layers. Since recently, functional materials such as MIM-structures showing resistive switching behavior are being studied by HAXPES even under "in-operando" conditions. An overview will be given on the current state of the technique highlighting its great potential by recent scientific results.

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Contributing Institute(s):

1. PETRA III Extension (FS-PEX)

Research Program(s):

1. PETRA Beamline P09 (POF2-54G14) (POF2-54G14)

Experiment(s):

1. PETRA Beamline P09 (PETRA III)

Appears in the scientific report 2014

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