Journal Article

DESY-2014-01549

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Gd and Sm on Clean semiconductor surfaces-Resonant Photoemission study

Guziewicz, E. (Corresponding author)Extern* ; Orlowski, B.Extern* ; Kowalski, B.Extern* ; Kowalik, I.Extern* ; Reszka, A.Extern* ; Wachnicki, L.Extern*

2013
North-Holland Publ. Co. Amsterdam

This record in other databases:    

Please use a persistent id in citations: doi:10.1016/j.apsusc.2013.05.128

Abstract: Resonant Photoemission Spectroscopy Fano type was applaide to study electronic structure of semiconductor compounds valence band change under sequential deposition of Gd or Sm atoms on the surface. Fano resonant spectra (4d-4f) alloud to study the contribution of 4f electrons to the valence band.

Note: © Elsevier B.V. ; Post referee fulltext in progress; Embargo 12 months from publication

---

Contributing Institute(s):

1. DOOR-User (DOOR)

Research Program(s):

1. DORIS Beamline E1 (POF2-54G13) (POF2-54G13)
2. FS-Proposal: II-20100066 EC (II-20100066-EC) (II-20100066-EC)

Experiment(s):

1. DORIS Beamline E1 (DORIS III)

---

Database coverage:
Nationallizenz ; SCOPUS ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

---