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001     92370
005     20250731122449.0
024 7 _ |a 1873-5002
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024 7 _ |a 0022-0248
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024 7 _ |a 10.1016/j.jcrysgro.2009.08.032
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024 7 _ |a WOS:000272019200002
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082 _ _ |a 540
100 1 _ |a Lankinen, A.
110 1 _ |a DESY
|b Experiments with synchrotron radiation
245 _ _ |a Synchrotron topography and X-ray diffraction study of GaInP layers grown on GaAs/Ge
260 _ _ |a Amsterdam [u.a.]
|c 2009
|b Elsevier
300 _ _ |a 4619-4627
336 7 _ |a Journal Article
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336 7 _ |a ARTICLE
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440 _ 0 |a J. Cryst. Growth
|0 PERI:(DE-600)1466514-1
|v 311
|y 22
|x 0022-0248
500 _ _ |3 Converted on 2013-05-30 14:28
500 _ _ |3 Converted on 2013-06-21 19:21
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700 1 _ |a Knuuttila, L.
700 1 _ |a Kostamo, P.
700 1 _ |a Tuomi, T. O.
700 1 _ |a Lipsanen, H.
700 1 _ |a McNally, P. J.
700 1 _ |a OReilly, L.
773 _ _ |a 10.1016/j.jcrysgro.2009.08.032
|g Vol. 311, p. 4619-4627
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|t Journal of crystal growth
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|y 2009
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856 4 _ |u https://bib-pubdb1.desy.de/record/92370/files/J%20Cryst%20Growth%20311%20%282009%29%204619%204627%20-%20SXRT%20of%20GaInP-GaAs-Ge.PDF
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913 1 _ |0 G:(DE-HGF)POF1-540
|v Kondensierte Materie
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|b Struktur der Materie
|l Großgeräte für die Forschung mit Photonen, Neutronen, Ionen
914 1 _ |y 2009
915 _ _ |a JCR/ISI refereed
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