Contribution to a conference proceedings/Contribution to a book

PUBDB-2025-04993

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Supercontinua in dispersion Engineered Gallium Nitride Waveguides

Fan, W.CFEL*DESY* ; Ludwig, M.Extern* ; Rousseau, I. ; Arabadzhiev, I. ; Ruhnke, B.CFEL*Extern*DESY* ; Wildi, T.CFEL*DESY* ; Herr, T.CFEL*DESY*

2025
IEEE

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Please use a persistent id in citations: doi:10.1109/CLEO/Europe-EQEC65582.2025.11111239  doi:10.1109/cleo/europe-eqec65582.2025.11111239

Abstract: Gallium nitride (GaN) is a promising material for nonlinear optics. It offers a second-order nonlinearity up to 20 pm/V and a third-order nonlinearity that is one order of magnitude higher than in silicon nitride at 1550 nm [1], [2]. Owing to its large bandgap of 3.4 eV GaN has a wide transparency range and is free of two-photon and three-photon absorption in the technologically important erbium-gain window. Recent advances have explored integrated GaN waveguide as a new platform for integrated photonics, demonstrating second-harmonic generation, four-wave mixing, soliton generation [2]–[4], supercontinuum generation and chip-based f-2f interferometry [5].

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Contributing Institute(s):

1. FS-CFEL-2-UMP (FS-CFEL-2-UMP)

Research Program(s):

1. 631 - Matter – Dynamics, Mechanisms and Control (POF4-631) (POF4-631)

Experiment(s):

1. No specific instrument

Appears in the scientific report 2025

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