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| Home > Publications database > Influence of an Al$_2$O$_3$ Capping Layer on the Thermal Reduction of the NativeNiobium Oxide: An In situ X-ray Reflectivity Study > print |
| Home > Publications database > Influence of an Al$_2$O$_3$ Capping Layer on the Thermal Reduction of the NativeNiobium Oxide: An In situ X-ray Reflectivity Study > print |
| 001 | 632415 | ||
| 005 | 20260324140419.0 | ||
| 024 | 7 | _ | |a 10.1103/48mp-wypj |2 doi |
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| 100 | 1 | _ | |a Zaidman, Artem |0 P:(DE-H253)PIP1101068 |b 0 |e Corresponding author |
| 245 | _ | _ | |a Influence of an Al$_2$O$_3$ Capping Layer on the Thermal Reduction of the NativeNiobium Oxide: An In situ X-ray Reflectivity Study |
| 260 | _ | _ | |a College Park, MD |c 2025 |b APS |
| 336 | 7 | _ | |a article |2 DRIVER |
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| 520 | _ | _ | |a Superconducting radio-frequency cavities, critical components of modern particle accelerators andquantum computing hardware, rely fundamentally on the surface properties of niobium. However,native oxide formation and impurity uptake in the near-surface region can degrade superconductingperformance and increase RF losses during operation. In this study, we present a systematic in situX-ray reflectivity investigation of (110) niobium single crystal surfaces with and without an atomiclayer deposited Al$_2$O$_3$ capping layer under ultra-high vacuum conditions up to 650 °C. Our resultsreveal a temperature-dependent reduction of the native niobium oxide layers in both capped anduncapped samples, with similarities in the overall behavior but clear differences in the reductionpathways. The Al$_2$O$_3$ capping layer modifies the reduction process, prevents oxide regrowth uponair exposure, and protects the niobium surface against impurity uptake during thermal treatment.These findings demonstrate that Al$_2$O$_3$ capping is an effective strategy to suppress native oxideformation during thermal cycling, offering clear benefits for the performance and operational lifetimeof superconducting radio-frequency cavities and related quantum computing technologies. |
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