Home > Publications database > Octave-spanning supercontinuum generation in a CMOS-compatible thin Si$_3$N$_4$ waveguide coated with highly nonlinear TeO$_2$ > print

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005     20250625125430.0
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100 1 _ |a Mbonde, Hamidu
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245 _ _ |a Octave-spanning supercontinuum generation in a CMOS-compatible thin Si$_3$N$_4$ waveguide coated with highly nonlinear TeO$_2$
260 _ _ |a Washington, DC
|c 2024
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520 _ _ |a Supercontinuum generation (SCG) is an important nonlinear optical process enabling broadband light sources for many applications, for which silicon nitride (Si3N4) has emerged as a leading on-chip platform. To achieve suitable group velocity dispersion and high confinement for broadband SCG the Si$_3$N$_4$ waveguide layer used is typically thick (>∼700 nm), which can lead to high stress and cracks unless specialized processing steps are used. Here, we report on efficient octave-spanning SCG in a thinner moderate-confinement 400-nm Si$_3$N$_4$ platform using a highly nonlinear tellurium oxide (TeO$_2$) coating. An octave supercontinuum spanning from 0.89 to 2.11 µm is achieved at a low peak power of 258 W using a 100-fs laser centered at 1565 nm. Our numerical simulations agree well with the experimental results giving a nonlinear parameter of 2.5 ± 0.5 W$^{−1}$m$^{−1}$, an increase by a factor of 2.5, when coating the Si$_3$N$_4$ waveguide with a TeO$_2$ film. This work demonstrates highly efficient SCG via effective dispersion engineering and an enhanced nonlinearity in CMOS-compatible hybrid TeO$_2$–Si$_3$N$_4$ waveguides and a promising route to monolithically integrated nonlinear, linear, and active functionalities on a single silicon photonic chip.
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700 1 _ |a Singh, Neetesh Kumar
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700 1 _ |a Segat Frare, Bruno L.
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700 1 _ |a Sinobad, Milan
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