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Contribution to a conference proceedings/Contribution to a book | PUBDB-2024-07030 |
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2024
IEEE
ISBN: 979-8-3503-8815-2
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Please use a persistent id in citations: doi:10.1109/NSS/MIC/RTSD57108.2024.10657120
Abstract: This contribution describes a monolithic digital silicon photomultiplier (dSiPM), designed and characterized at DESY. It consists of an array of single photon avalanche diodes (SPADs) arranged in a 32 x 32-pixel matrix at 70 μm pitch, with embedded CMOS circuitry for on-chip signal processing. The dSiPM is designed in LFoundry’s 150-nm CMOS process employing a fully characterized SPAD design provided by the manufacturer. It enables in-pixel sensor-signal digitization and masking, and provides the full hit map and time stamping at 3-MHz frame rate with a resolution better than 100 ps. Especially the availability of highly granular position information will be beneficial for applications like the readout of scintillating fibers, or the detection of minimum-ionizing particles (MIPs). Several measurements were carried out in the laboratory and at the DESY II test-beam facility using the Caribou readout system. The dark-count rate as function of the overvoltage and temperature, the TDC resolution, as well as their differential and integral nonlinearity are presented. The dSiPM was used to identify MIPs in the test beam and has demonstrated a detection efficiency of 30 %, limited by the fill factor. Comparing the time measurements of two dSiPMs installed at the test beam, show a time resolution on the order of 50 ps.
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