001     617750
005     20250715171349.0
024 7 _ |a 10.1109/NSS/MIC/RTSD57108.2024.10657527
|2 doi
024 7 _ |2 openalex
|a openalex:W4402834278
037 _ _ |a PUBDB-2024-07028
041 _ _ |a English
100 1 _ |a Reckleben, Christian
|0 P:(DE-H253)PIP1001714
|b 0
|e Corresponding author
|u desy
111 2 _ |a IEEE Nuclear Science Symposium
|c Tampa
|d 2024-10-26 - 2024-11-02
|w FL
245 _ _ |a A front-end circuit for a Monolithic Active Pixel Sensor in 65-nm CMOS Technology
260 _ _ |c 2024
336 7 _ |a Conference Paper
|0 33
|2 EndNote
336 7 _ |a INPROCEEDINGS
|2 BibTeX
336 7 _ |a conferenceObject
|2 DRIVER
336 7 _ |a CONFERENCE_POSTER
|2 ORCID
336 7 _ |a Output Types/Conference Poster
|2 DataCite
336 7 _ |a Poster
|b poster
|m poster
|0 PUB:(DE-HGF)24
|s 1738069789_2504916
|2 PUB:(DE-HGF)
502 _ _ |c DESY
520 _ _ |a This work presents an analog front-end circuitry implemented in a monolithic active pixel sensor (MAPS) fabricated in a 65-nm CMOS imaging technology. It combines the low-capacitance collection electrode (< 2 fF) and an analog processor featuring a charge-sensitive amplifier (CSA) driving a fast continuous-time threshold comparator. The CSA features a gain stage along with a Krummenacher-type feedback network. Its gain approximately amounts to 130 µV/e- and provides a rise time of 5 ns. The negative feedback provides leakage current compensation of the sensor diode and a continuous linear discharge of the feedback capacitor. This implements a time-over-threshold (ToT) measurement in combination with the comparator. Threshold voltage and Krummenacher-bias current can be adjusted pixel wise by using a 4-bit and 3-bit DAC, respectively. The prototype shows an input referred noise charge smaller than 35 e-rms. It takes an overall area of 500 µm2, the power consumption is less than 4 µW at a power supply of 1.2 V. Beside design aspects electrical and spectral characterization of a small pixel matrix will be shown in this work.
536 _ _ |a 622 - Detector Technologies and Systems (POF4-622)
|0 G:(DE-HGF)POF4-622
|c POF4-622
|f POF IV
|x 0
588 _ _ |a Dataset connected to CrossRef Conference
693 _ _ |a DESY II
|f DESY: TestBeamline 21
|1 EXP:(DE-H253)DESYII-20150101
|0 EXP:(DE-H253)TestBeamline21-20150101
|6 EXP:(DE-H253)TestBeamline21-20150101
|x 0
700 1 _ |a Hansen, Karsten
|0 P:(DE-H253)PIP1003149
|b 1
|u desy
700 1 _ |a Mulyanto, Budi
|0 P:(DE-H253)PIP1097737
|b 2
|u desy
700 1 _ |a Chauhan, Ankur
|0 P:(DE-H253)PIP1093241
|b 3
|u desy
773 _ _ |a 10.1109/NSS/MIC/RTSD57108.2024.10657527
856 4 _ |u https://bib-pubdb1.desy.de/record/617750/files/A_front-end_circuit_for_a_Monolithic_Active_Pixel_Sensor_in_65-nm_CMOS_Technology.pdf
|y Restricted
856 4 _ |u https://bib-pubdb1.desy.de/record/617750/files/A_front-end_circuit_for_a_Monolithic_Active_Pixel_Sensor_in_65-nm_CMOS_Technology.pdf?subformat=pdfa
|x pdfa
|y Restricted
909 C O |o oai:bib-pubdb1.desy.de:617750
|p VDB
910 1 _ |a Deutsches Elektronen-Synchrotron
|0 I:(DE-588b)2008985-5
|k DESY
|b 0
|6 P:(DE-H253)PIP1001714
910 1 _ |a Deutsches Elektronen-Synchrotron
|0 I:(DE-588b)2008985-5
|k DESY
|b 1
|6 P:(DE-H253)PIP1003149
910 1 _ |a Deutsches Elektronen-Synchrotron
|0 I:(DE-588b)2008985-5
|k DESY
|b 2
|6 P:(DE-H253)PIP1097737
910 1 _ |a Deutsches Elektronen-Synchrotron
|0 I:(DE-588b)2008985-5
|k DESY
|b 3
|6 P:(DE-H253)PIP1093241
913 1 _ |a DE-HGF
|b Forschungsbereich Materie
|l Materie und Technologie
|1 G:(DE-HGF)POF4-620
|0 G:(DE-HGF)POF4-622
|3 G:(DE-HGF)POF4
|2 G:(DE-HGF)POF4-600
|4 G:(DE-HGF)POF
|v Detector Technologies and Systems
|x 0
914 1 _ |y 2024
920 1 _ |0 I:(DE-H253)FE-20120731
|k FE
|l Koordination Elektronik Entwicklung
|x 0
980 _ _ |a poster
980 _ _ |a VDB
980 _ _ |a I:(DE-H253)FE-20120731
980 _ _ |a UNRESTRICTED


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