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@ARTICLE{Goetz:614697,
      author       = {Goetz, Klaus and Prihoda, Annemarie and Shen, Chen and
                      Dierner, Martin and Dallmann, Johannes and Prusch, Saskia
                      and Zahn, Dirk and Spiecker, Erdmann and Unruh, Tobias},
      title        = {{N}ucleation {B}ehavior of {S}n{S}$_2$ on {T}hiol
                      {F}unctionalized {SAM}s {D}uring {S}olution‐{B}ased
                      {A}tomic {L}ayer {D}eposition},
      journal      = {Advanced materials interfaces},
      volume       = {11},
      issn         = {2196-7350},
      address      = {Weinheim},
      publisher    = {Wiley-VCH},
      reportid     = {PUBDB-2024-05926},
      pages        = {2300990},
      year         = {2024},
      abstract     = {Solution-based atomic layer deposition (sALD) is an
                      emerging technique that transfers the principle of
                      traditional atomic layer deposition (ALD) from the gas phase
                      into a wet chemical environment. This new preparation
                      technique has new and unique properties and requirements. A
                      large number of new surfaces and reactants are available to
                      produce active 2D materials.In this work a reproducible
                      procedure to coat silicon wafers with a densely packed
                      monolayer of (3-Mercaptopropyl)trimethoxysilane (MPTMS)
                      molecules is presented. These highly functionalized surfaces
                      can be used to seed the nucleation of SnS$_2$ in a
                      solution-based ALD procedure. A coating routine for the
                      production of SnS$_2$ is adapted from ALD to sALD and
                      insight into the nucleation behavior of the reactands is
                      given. X-ray reflectometry (XRR) is used to resolve the
                      nucleation process of SnS$_2$ on an MPTMS self assembled
                      monolayer (SAM) during the first three cycles of an sALD
                      procedure. The comparison of ex situ XRR, in situ XRR,
                      grazing incidence wide-angle X-ray scattering (GIWAXS),
                      atomic force microscopy (AFM), energy dispersive X-ray
                      spectroscopy (EDX) measurements, and density functional
                      theory (DFT) calculations find that SnS$_2$ first forms a
                      closed layer and then continues to grow in islands on thiol
                      functionalized silane SAMs. Subsequent coating cycles will
                      continue the growth of the islands laterally and in height.},
      cin          = {FS-PETRA-D / DOOR ; HAS-User},
      ddc          = {600},
      cid          = {I:(DE-H253)FS-PETRA-D-20210408 /
                      I:(DE-H253)HAS-User-20120731},
      pnm          = {632 - Materials – Quantum, Complex and Functional
                      Materials (POF4-632) / 6G3 - PETRA III (DESY) (POF4-6G3) /
                      FS-Proposal: I-20180247 (I-20180247) / DFG project
                      G:(GEPRIS)214951840 - FOR 1878: funCOS - Funktionale
                      molekulare Strukturen auf komplexen Oxidoberflächen
                      (214951840)},
      pid          = {G:(DE-HGF)POF4-632 / G:(DE-HGF)POF4-6G3 /
                      G:(DE-H253)I-20180247 / G:(GEPRIS)214951840},
      experiment   = {EXP:(DE-H253)P-P08-20150101},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:001281612600001},
      doi          = {10.1002/admi.202300990},
      url          = {https://bib-pubdb1.desy.de/record/614697},
}