TY - JOUR
AU - Goetz, Klaus
AU - Prihoda, Annemarie
AU - Shen, Chen
AU - Dierner, Martin
AU - Dallmann, Johannes
AU - Prusch, Saskia
AU - Zahn, Dirk
AU - Spiecker, Erdmann
AU - Unruh, Tobias
TI - Nucleation Behavior of SnS<sub>2</sub> on Thiol Functionalized SAMs During Solution‐Based Atomic Layer Deposition
JO - Advanced materials interfaces
VL - 11
SN - 2196-7350
CY - Weinheim
PB - Wiley-VCH
M1 - PUBDB-2024-05926
SP - 2300990
PY - 2024
AB - Solution-based atomic layer deposition (sALD) is an emerging technique that transfers the principle of traditional atomic layer deposition (ALD) from the gas phase into a wet chemical environment. This new preparation technique has new and unique properties and requirements. A large number of new surfaces and reactants are available to produce active 2D materials.In this work a reproducible procedure to coat silicon wafers with a densely packed monolayer of (3-Mercaptopropyl)trimethoxysilane (MPTMS) molecules is presented. These highly functionalized surfaces can be used to seed the nucleation of SnS<sub>2</sub> in a solution-based ALD procedure. A coating routine for the production of SnS<sub>2</sub> is adapted from ALD to sALD and insight into the nucleation behavior of the reactands is given. X-ray reflectometry (XRR) is used to resolve the nucleation process of SnS<sub>2</sub> on an MPTMS self assembled monolayer (SAM) during the first three cycles of an sALD procedure. The comparison of ex situ XRR, in situ XRR, grazing incidence wide-angle X-ray scattering (GIWAXS), atomic force microscopy (AFM), energy dispersive X-ray spectroscopy (EDX) measurements, and density functional theory (DFT) calculations find that SnS<sub>2</sub> first forms a closed layer and then continues to grow in islands on thiol functionalized silane SAMs. Subsequent coating cycles will continue the growth of the islands laterally and in height.
LB - PUB:(DE-HGF)16
UR - <Go to ISI:>//WOS:001281612600001
DO - DOI:10.1002/admi.202300990
UR - https://bib-pubdb1.desy.de/record/614697
ER -