%0 Journal Article
%A Goetz, Klaus
%A Prihoda, Annemarie
%A Shen, Chen
%A Dierner, Martin
%A Dallmann, Johannes
%A Prusch, Saskia
%A Zahn, Dirk
%A Spiecker, Erdmann
%A Unruh, Tobias
%T Nucleation Behavior of SnS<sub>2</sub> on Thiol Functionalized SAMs During Solution‐Based Atomic Layer Deposition
%J Advanced materials interfaces
%V 11
%@ 2196-7350
%C Weinheim
%I Wiley-VCH
%M PUBDB-2024-05926
%P 2300990
%D 2024
%X Solution-based atomic layer deposition (sALD) is an emerging technique that transfers the principle of traditional atomic layer deposition (ALD) from the gas phase into a wet chemical environment. This new preparation technique has new and unique properties and requirements. A large number of new surfaces and reactants are available to produce active 2D materials.In this work a reproducible procedure to coat silicon wafers with a densely packed monolayer of (3-Mercaptopropyl)trimethoxysilane (MPTMS) molecules is presented. These highly functionalized surfaces can be used to seed the nucleation of SnS<sub>2</sub> in a solution-based ALD procedure. A coating routine for the production of SnS<sub>2</sub> is adapted from ALD to sALD and insight into the nucleation behavior of the reactands is given. X-ray reflectometry (XRR) is used to resolve the nucleation process of SnS<sub>2</sub> on an MPTMS self assembled monolayer (SAM) during the first three cycles of an sALD procedure. The comparison of ex situ XRR, in situ XRR, grazing incidence wide-angle X-ray scattering (GIWAXS), atomic force microscopy (AFM), energy dispersive X-ray spectroscopy (EDX) measurements, and density functional theory (DFT) calculations find that SnS<sub>2</sub> first forms a closed layer and then continues to grow in islands on thiol functionalized silane SAMs. Subsequent coating cycles will continue the growth of the islands laterally and in height.   
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:001281612600001
%R 10.1002/admi.202300990
%U https://bib-pubdb1.desy.de/record/614697