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| 001 | 483355 | ||
| 005 | 20250715173526.0 | ||
| 024 | 7 | _ | |a 10.1021/acsnano.3c04835 |2 doi |
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| 082 | _ | _ | |a 540 |
| 100 | 1 | _ | |a Dey, Arka Bikash |0 P:(DE-H253)PIP1020660 |b 0 |e Corresponding author |
| 245 | _ | _ | |a Culling a self-assembled quantum dot as a single-photon source using X-ray microscopy |
| 260 | _ | _ | |a Washington, DC |c 2023 |b Soc. |
| 336 | 7 | _ | |a article |2 DRIVER |
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| 500 | _ | _ | |a The paper is published in "ASAP" category, the volume number and page number are yet to come. The DOI number is already assigned. |
| 520 | _ | _ | |a Epitaxially grown self-assembled semiconductor quantum dots (QDs) with atom-like optical properties, have emerged as the best choice for single photon sources required for the development of quantum technology and quantum networks. Nondestructive selection of a single QD having desired structural, compositional, and optical characteristics is essential to obtain noise-free, fully indistinguishable single or entangled photons out of single-photon emitters. Here, we show that the structural-orientations and local compositional-inhomogeneities within a single QD and the surrounding wet-layer can be probed in a screening fashion by scanning X-ray diffraction microscopy (SXDM) and X-ray fluorescence (XRF) with a few tens of nanometers-sized synchrotron radiation-beam. The presented measurement protocol can be used to cull the best single QD from the enormous number of self-assembled dots grown simultaneously. The results obtained show that the elemental composition and resultant strain profiles of a QD are sensitive to in-plane crystallographic directions. We also observe that lattice expansion after a certain composition-limit introduces shear strain within a QD, enabling the possibility of controlled chiral-QD formation. Nanoscale-chirality and compositional-anisotropy, contradictory to common assumption, need to be incorporated into existing theoretical models to predict the optical properties of single-photon sources and to further tune the epitaxial growth process of self-assembled quantum structures. |
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| 700 | 1 | _ | |a Sanyal, Milan |0 P:(DE-H253)PIP1013113 |b 1 |e Corresponding author |
| 700 | 1 | _ | |a Schropp, Andreas |0 P:(DE-H253)PIP1011060 |b 2 |
| 700 | 1 | _ | |a Achiles, Silvio |0 P:(DE-HGF)0 |b 3 |
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