000316500 001__ 316500
000316500 005__ 20250717104523.0
000316500 0247_ $$2doi$$a10.1039/C5TA09873D
000316500 0247_ $$2ISSN$$a2050-7488
000316500 0247_ $$2ISSN$$a2050-7496
000316500 0247_ $$2WOS$$aWOS:000371967000019
000316500 0247_ $$2openalex$$aopenalex:W2270472851
000316500 037__ $$aPUBDB-2016-06673
000316500 041__ $$aEnglish
000316500 082__ $$a540
000316500 1001_ $$0P:(DE-H253)PIP1014212$$aWang, Weijia$$b0
000316500 245__ $$aInvestigation of morphological degradation of P3HT:PCBM bulk heterojunction films exposed to long-term host solvent vapor
000316500 260__ $$aLondon [u.a.]$$bRSC$$c2016
000316500 3367_ $$2DRIVER$$aarticle
000316500 3367_ $$2DataCite$$aOutput Types/Journal article
000316500 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article$$bjournal$$mjournal$$s1507206417_31753
000316500 3367_ $$2BibTeX$$aARTICLE
000316500 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000316500 3367_ $$00$$2EndNote$$aJournal Article
000316500 500__ $$a© The Royal Society of Chemistry ; Post referee fulltext in progress 2; Embargo 12 months from publication
000316500 520__ $$aSolution-based processing procedures are widely used during the fabrication of polymer solar cells both on the lab scale and in industrial applications. The understanding of device stability in its host solvent vapor atmosphere is of great significance to the fabrication, encapsulation and storage. Solar cells with poly(3-hexylthiophene):[6,6]-phenyl-C61 butyric acid methyl ester (P3HT:PCBM) bulk heterojunction (BHJ) active layers are prepared with different solvents of chlorobenzene, toluene, xylene and dichlorobenzene. The stability is investigated via exposure to their respective host solvent vapor for a long period. All solar cells strongly degrade after exposure to solvent vapor for long-term and only the dichlorobenzene-related device still shows reasonable function. The morphology of P3HT:PCBM BHJ films is probed using optical microscopy, atomic force microscopy, grazing incidence small and wide angle X-ray scattering and absorption measurements. The solvent induced PCBM crystallization is identified as the main reason for device failure.
000316500 536__ $$0G:(DE-HGF)POF3-6214$$a6214 - Nanoscience and Materials for Information Technology (POF3-621)$$cPOF3-621$$fPOF III$$x0
000316500 588__ $$aDataset connected to CrossRef
000316500 693__ $$0EXP:(DE-H253)D-BW4-20150101$$1EXP:(DE-H253)DORISIII-20150101$$6EXP:(DE-H253)D-BW4-20150101$$aDORIS III$$fDORIS Beamline BW4$$x0
000316500 693__ $$0EXP:(DE-H253)D-BW2-20150101$$1EXP:(DE-H253)DORISIII-20150101$$6EXP:(DE-H253)D-BW2-20150101$$aDORIS III$$fDORIS Beamline BW2$$x1
000316500 7001_ $$0P:(DE-H253)PIP1012096$$aGuo, Shuai$$b1
000316500 7001_ $$0P:(DE-H253)PIP1014210$$aHerzig, Eva$$b2
000316500 7001_ $$0P:(DE-H253)PIP1013400$$aSarkar, Kuhu$$b3
000316500 7001_ $$0P:(DE-H253)PIP1011722$$aSchindler, Markus$$b4
000316500 7001_ $$0P:(DE-H253)PIP1008455$$aMagerl, David$$b5
000316500 7001_ $$0P:(DE-H253)PIP1013910$$aPhilipp, Martine$$b6
000316500 7001_ $$0P:(DE-H253)PIP1007827$$aPerlich, Jan$$b7
000316500 7001_ $$0P:(DE-H253)PIP1007825$$aMüller-Buschbaum, Peter$$b8$$eCorresponding author
000316500 773__ $$0PERI:(DE-600)2702232-8$$a10.1039/C5TA09873D$$gVol. 4, no. 10, p. 3743 - 3753$$n10$$p3743 - 3753$$tJournal of materials chemistry / A$$v4$$x2050-7496$$y2016
000316500 8564_ $$uhttps://bib-pubdb1.desy.de/record/316500/files/c5ta09873d.pdf$$yRestricted
000316500 8564_ $$uhttps://bib-pubdb1.desy.de/record/316500/files/c5ta09873d.gif?subformat=icon$$xicon$$yRestricted
000316500 8564_ $$uhttps://bib-pubdb1.desy.de/record/316500/files/c5ta09873d.jpg?subformat=icon-1440$$xicon-1440$$yRestricted
000316500 8564_ $$uhttps://bib-pubdb1.desy.de/record/316500/files/c5ta09873d.jpg?subformat=icon-180$$xicon-180$$yRestricted
000316500 8564_ $$uhttps://bib-pubdb1.desy.de/record/316500/files/c5ta09873d.jpg?subformat=icon-640$$xicon-640$$yRestricted
000316500 909CO $$ooai:bib-pubdb1.desy.de:316500$$pVDB
000316500 915__ $$0StatID:(DE-HGF)0200$$2StatID$$aDBCoverage$$bSCOPUS
000316500 915__ $$0StatID:(DE-HGF)1160$$2StatID$$aDBCoverage$$bCurrent Contents - Engineering, Computing and Technology
000316500 915__ $$0StatID:(DE-HGF)0100$$2StatID$$aJCR$$bJ MATER CHEM A : 2015
000316500 915__ $$0StatID:(DE-HGF)9905$$2StatID$$aIF >= 5$$bJ MATER CHEM A : 2015
000316500 915__ $$0StatID:(DE-HGF)0150$$2StatID$$aDBCoverage$$bWeb of Science Core Collection
000316500 915__ $$0StatID:(DE-HGF)0110$$2StatID$$aWoS$$bScience Citation Index
000316500 915__ $$0StatID:(DE-HGF)0111$$2StatID$$aWoS$$bScience Citation Index Expanded
000316500 915__ $$0StatID:(DE-HGF)0400$$2StatID$$aAllianz-Lizenz / DFG
000316500 915__ $$0StatID:(DE-HGF)1150$$2StatID$$aDBCoverage$$bCurrent Contents - Physical, Chemical and Earth Sciences
000316500 915__ $$0StatID:(DE-HGF)0300$$2StatID$$aDBCoverage$$bMedline
000316500 915__ $$0StatID:(DE-HGF)0550$$2StatID$$aNo Authors Fulltext
000316500 915__ $$0StatID:(DE-HGF)0199$$2StatID$$aDBCoverage$$bThomson Reuters Master Journal List
000316500 9141_ $$y2016
000316500 9101_ $$0I:(DE-HGF)0$$6P:(DE-H253)PIP1014212$$aExternes Institut$$b0$$kExtern
000316500 9101_ $$0I:(DE-HGF)0$$6P:(DE-H253)PIP1012096$$aExternes Institut$$b1$$kExtern
000316500 9101_ $$0I:(DE-HGF)0$$6P:(DE-H253)PIP1014210$$aExternes Institut$$b2$$kExtern
000316500 9101_ $$0I:(DE-HGF)0$$6P:(DE-H253)PIP1013400$$aExternes Institut$$b3$$kExtern
000316500 9101_ $$0I:(DE-HGF)0$$6P:(DE-H253)PIP1011722$$aExternes Institut$$b4$$kExtern
000316500 9101_ $$0I:(DE-HGF)0$$6P:(DE-H253)PIP1008455$$aExternes Institut$$b5$$kExtern
000316500 9101_ $$0I:(DE-HGF)0$$6P:(DE-H253)PIP1013910$$aExternes Institut$$b6$$kExtern
000316500 9101_ $$0I:(DE-588b)2008985-5$$6P:(DE-H253)PIP1007827$$aDeutsches Elektronen-Synchrotron$$b7$$kDESY
000316500 9101_ $$0I:(DE-HGF)0$$6P:(DE-H253)PIP1007825$$aExternes Institut$$b8$$kExtern
000316500 9131_ $$0G:(DE-HGF)POF3-621$$1G:(DE-HGF)POF3-620$$2G:(DE-HGF)POF3-600$$3G:(DE-HGF)POF3$$4G:(DE-HGF)POF$$9G:(DE-HGF)POF3-6214$$aDE-HGF$$bForschungsbereich Materie$$lVon Materie zu Materialien und Leben$$vIn-house research on the structure, dynamics and function of matter$$x0
000316500 9201_ $$0I:(DE-H253)HAS-User-20120731$$kDOOR$$lDOOR-User$$x0
000316500 9201_ $$0I:(DE-H253)FS-DO-20120731$$kFS-DO$$lFS-Experimentebetreuung DORIS$$x1
000316500 980__ $$ajournal
000316500 980__ $$aVDB
000316500 980__ $$aUNRESTRICTED
000316500 980__ $$aI:(DE-H253)HAS-User-20120731
000316500 980__ $$aI:(DE-H253)FS-DO-20120731