000315025 001__ 315025
000315025 005__ 20250717105608.0
000315025 0247_ $$2doi$$a10.1016/j.mee.2015.12.015
000315025 0247_ $$2ISSN$$a0167-9317
000315025 0247_ $$2ISSN$$a1873-5568
000315025 0247_ $$2datacite_doi$$a10.3204/PUBDB-2016-05566
000315025 0247_ $$2WOS$$aWOS:000385991400002
000315025 0247_ $$2altmetric$$aaltmetric:5613921
000315025 0247_ $$2openalex$$aopenalex:W2206428012
000315025 037__ $$aPUBDB-2016-05566
000315025 041__ $$aEnglish
000315025 082__ $$a620
000315025 1001_ $$aParfeniukas, Karolis$$b0$$eCorresponding author
000315025 245__ $$aImproved tungsten nanofabrication for hard X-ray zone plates
000315025 260__ $$a[S.l.]$$bElsevier$$c2016
000315025 3367_ $$2DRIVER$$aarticle
000315025 3367_ $$2DataCite$$aOutput Types/Journal article
000315025 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article$$bjournal$$mjournal$$s1599209467_27535
000315025 3367_ $$2BibTeX$$aARTICLE
000315025 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000315025 3367_ $$00$$2EndNote$$aJournal Article
000315025 520__ $$aWe present an improved nanofabrication method of high aspect ratio tungsten structures for use in high efficiency nanofocusing hard X-ray zone plates. A ZEP 7000 electron beam resist layer used for patterning is cured by a second, much larger electron dose after development. The curing step improves pattern transfer fidelity into a chromium hard mask by reactive ion etching using Cl2/O2 chemistry. The pattern can then be transferred into an underlying tungsten layer by another reactive ion etching step using SF6/O2. A 630 nm-thick tungsten zone plate with smallest line width of 30 nm was fabricated using this method and characterized. At 8.2 keV photon energy the device showed an efficiency of 2.2% with a focal spot size at the diffraction limit, measured at Diamond Light Source I-13-1 beamline.
000315025 536__ $$0G:(DE-HGF)POF3-6214$$a6214 - Nanoscience and Materials for Information Technology (POF3-621)$$cPOF3-621$$fPOF III$$x0
000315025 588__ $$aDataset connected to CrossRef
000315025 693__ $$0EXP:(DE-MLZ)External-20140101$$5EXP:(DE-MLZ)External-20140101$$eMeasurement at external facility$$x0
000315025 7001_ $$0P:(DE-HGF)0$$aRahomäki, Jussi$$b1
000315025 7001_ $$0P:(DE-H253)PIP1024019$$aGiakoumidis, Stylianos$$b2
000315025 7001_ $$0P:(DE-H253)PIP1013169$$aSeiboth, Frank$$b3$$udesy
000315025 7001_ $$0P:(DE-H253)PIP1020829$$aWittwer, Felix$$b4
000315025 7001_ $$0P:(DE-H253)PIP1008438$$aSchroer, Christian$$b5
000315025 7001_ $$0P:(DE-H253)PIP1015239$$aVogt, Ulrich$$b6
000315025 773__ $$0PERI:(DE-600)1497065-x$$a10.1016/j.mee.2015.12.015$$gVol. 152, p. 6 - 9$$p6 - 9$$tMicroelectronic engineering$$v152$$x0167-9317$$y2016
000315025 8564_ $$uhttps://bib-pubdb1.desy.de/record/315025/files/1-s2.0-S0167931715301155-main.pdf$$yOpenAccess
000315025 8564_ $$uhttps://bib-pubdb1.desy.de/record/315025/files/1-s2.0-S0167931715301155-main.gif?subformat=icon$$xicon$$yOpenAccess
000315025 8564_ $$uhttps://bib-pubdb1.desy.de/record/315025/files/1-s2.0-S0167931715301155-main.jpg?subformat=icon-1440$$xicon-1440$$yOpenAccess
000315025 8564_ $$uhttps://bib-pubdb1.desy.de/record/315025/files/1-s2.0-S0167931715301155-main.jpg?subformat=icon-180$$xicon-180$$yOpenAccess
000315025 8564_ $$uhttps://bib-pubdb1.desy.de/record/315025/files/1-s2.0-S0167931715301155-main.jpg?subformat=icon-640$$xicon-640$$yOpenAccess
000315025 8564_ $$uhttps://bib-pubdb1.desy.de/record/315025/files/1-s2.0-S0167931715301155-main.pdf?subformat=pdfa$$xpdfa$$yOpenAccess
000315025 909CO $$ooai:bib-pubdb1.desy.de:315025$$pdnbdelivery$$pdriver$$pVDB$$popen_access$$popenaire
000315025 9101_ $$0I:(DE-HGF)0$$6P:(DE-H253)PIP1024019$$aExternes Institut$$b2$$kExtern
000315025 9101_ $$0I:(DE-588b)2008985-5$$6P:(DE-H253)PIP1013169$$aDeutsches Elektronen-Synchrotron$$b3$$kDESY
000315025 9101_ $$0I:(DE-588b)2008985-5$$6P:(DE-H253)PIP1020829$$aDeutsches Elektronen-Synchrotron$$b4$$kDESY
000315025 9101_ $$0I:(DE-588b)2008985-5$$6P:(DE-H253)PIP1008438$$aDeutsches Elektronen-Synchrotron$$b5$$kDESY
000315025 9101_ $$0I:(DE-HGF)0$$6P:(DE-H253)PIP1015239$$aExternal Institute$$b6$$kExtern
000315025 9131_ $$0G:(DE-HGF)POF3-621$$1G:(DE-HGF)POF3-620$$2G:(DE-HGF)POF3-600$$3G:(DE-HGF)POF3$$4G:(DE-HGF)POF$$9G:(DE-HGF)POF3-6214$$aDE-HGF$$bForschungsbereich Materie$$lVon Materie zu Materialien und Leben$$vIn-house research on the structure, dynamics and function of matter$$x0
000315025 9141_ $$y2016
000315025 915__ $$0StatID:(DE-HGF)0200$$2StatID$$aDBCoverage$$bSCOPUS
000315025 915__ $$0StatID:(DE-HGF)1160$$2StatID$$aDBCoverage$$bCurrent Contents - Engineering, Computing and Technology
000315025 915__ $$0LIC:(DE-HGF)CCBY4$$2HGFVOC$$aCreative Commons Attribution CC BY 4.0
000315025 915__ $$0StatID:(DE-HGF)0600$$2StatID$$aDBCoverage$$bEbsco Academic Search
000315025 915__ $$0StatID:(DE-HGF)0100$$2StatID$$aJCR$$bMICROELECTRON ENG : 2015
000315025 915__ $$0StatID:(DE-HGF)0150$$2StatID$$aDBCoverage$$bWeb of Science Core Collection
000315025 915__ $$0StatID:(DE-HGF)0110$$2StatID$$aWoS$$bScience Citation Index
000315025 915__ $$0StatID:(DE-HGF)0111$$2StatID$$aWoS$$bScience Citation Index Expanded
000315025 915__ $$0StatID:(DE-HGF)9900$$2StatID$$aIF < 5
000315025 915__ $$0StatID:(DE-HGF)0510$$2StatID$$aOpenAccess
000315025 915__ $$0StatID:(DE-HGF)0030$$2StatID$$aPeer Review$$bASC
000315025 915__ $$0StatID:(DE-HGF)0300$$2StatID$$aDBCoverage$$bMedline
000315025 915__ $$0StatID:(DE-HGF)0420$$2StatID$$aNationallizenz
000315025 915__ $$0StatID:(DE-HGF)0199$$2StatID$$aDBCoverage$$bThomson Reuters Master Journal List
000315025 9201_ $$0I:(DE-H253)FS-PETRA-20140814$$kFS-PETRA$$lFS-PETRA$$x0
000315025 980__ $$ajournal
000315025 980__ $$aVDB
000315025 980__ $$aI:(DE-H253)FS-PETRA-20140814
000315025 980__ $$aUNRESTRICTED
000315025 9801_ $$aFullTexts