Conference Presentation

PUBDB-2016-01126

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Bond stretching force constants in (In,Ga)P

Eckner, S.>Extern* ; Gnauck, M.>Extern* ; Johannes, A.>Extern* ; Steinbach, T.>Extern* ; Kaemmer, H.>Extern* ; Ridgway, M.>Extern* ; Schnohr, C. (Corresponding author)>Extern*

2015

Abstract: In order to exploit the full potential of mixed III-V-semiconductors for electronical and opto-electronical applications, a deeper understandingof their atomic scale structure and its relation to relevant properties such as the band gap is necessary. The local atomic arrangement, whichis crucial especially for strained thin films and nanostructures, strongly depends on the bond stretching force constants of the atomic pairspresent in the material. In this study, (In,Ga)P grown by metal organic chemical vapour deposition was investigated using extended X-ray absorption fine structure spectroscopy. Measurements at the In- and Ga-K-edge were performed at ten different temperatures to determine the bond length variation as a function of temperature. As a result, bond stretching force constants of Ga-P- and In-P-bonds were determined in (In,Ga)P for varying indium content. These bond stretching force constants can be used in analyses of Raman spectra and in theoretical models of strained III-V thin films and nanostructures.

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Contributing Institute(s):

1. DOOR-User (DOOR)

Research Program(s):

1. 899 - ohne Topic (POF3-899) (POF3-899)
2. FS-Proposal: I-20110408 (I-20110408) (I-20110408)

Experiment(s):

1. DORIS Beamline C (DORIS III)

Appears in the scientific report 2015

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