Ion implantation of the 4H SiC epitaxial layers and substrates with 2 MeV $\mathrm{Se^{+}}$ and 1 MeV $\mathrm{Al^{+}}$ ions

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Ion implantation of the 4H SiC epitaxial layers and substrates with 2 MeV $\mathrm{Se^{+}}$ and 1 MeV $\mathrm{Al^{+}}$ ions - PUBDB-2016-00434

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