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| Home > Publications database > Hard X-ray PES: chemical and electronic properties of functional materials |
| Conference Presentation (Invited) | PUBDB-2015-00451 |
2014
Abstract: Many novel materials for device applications consist of multi-layered nano-structures and their functional properties sensitively depend on the chemical and electronic characteristics in the interface region. Photoelectron spectroscopy (PES) is a well-established effective tool to study electronic and chemical structure at solid surfaces. However, in order to probe technologically relevant complex layered materials of many nm thickness, soft X-ray excitation used in conventional PES is inadequate because of the inherently small probing depth. This is overcome by using hard X-rays in the multi keV range (HAXPES) which produces highly energetic photoelectrons emerging from significantly larger depths inside the material. Itthen becomes possible to also study electronic and chemical properties of complex bulk materials and buried interfaces. State-of-at instruments use brilliant tunable undulator radiation at synchrotron sources in a typical range 3 to 12 keV allowing to obtain detailed information down to a depth of about 10-20 nm. Most interesting for materials science applications is the ability to study as-grown materials without any need for prior in-situ surface treatment or sensitive structures covered by protective metallic layers. Since recently, e.g. functional materials such as MIM-structures showing resistive switching behavior are being studied by HAXPES under "in-operando" conditions. An overview will be given on the current state of the technique highlighting its great potential by recent scientific results on functional materials.
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