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@ARTICLE{Orlowski:88058,
      author       = {Orlowski, B. A. and Kowalski, B. J. and Lusakowska, E. and
                      Kowalik, I. A. and Pietrzyk, M. and Guziewicz, E. and
                      Nossarzewska-Orlowska, E. and Johnson, R. L. and DESY},
      title        = {{M}icroscopic and {R}esonant {P}hotoemission study of
                      {G}d/{S}i(111) interface},
      journal      = {Radiation physics and chemistry},
      volume       = {78},
      issn         = {0969-806X},
      address      = {Oxford [u.a.]},
      publisher    = {Pergamon Press},
      reportid     = {PHPPUBDB-10468},
      pages        = {S22-S24},
      year         = {2009},
      note         = {© Elsevier Ltd.; Post referee fulltext in progress 2;
                      Embargo 12 months from publication},
      abstract     = {Atomic force microscopy (AFM) and Fano-type resonant
                      photoemission spectroscopy (RPS) of Gd atoms deposited on
                      Si(1 1 1) surface are presented. Layers of thicknesses 0.2,
                      2 and 15 nm were deposited under UHV conditions. Anomalously
                      deep craters were observed on the Si(1 1 1) surface side of
                      the interface below the Gd layer. We expect that anomalously
                      high chemical activity of Gd and a dominating diffusion of
                      Si atoms are responsible for the effect. Application of
                      synchrotron radiation in the energy region hν corresponding
                      to the Gd 4d–4f transition (140–170 eV) enabled
                      Fano-type resonant photoemission spectra. Si(1 1 1) surface
                      valence band spectra with contributions from Gd 4f electrons
                      were detected for a 0.2-nm-thick Gd layer deposited onto a
                      clean Si(1 1 1) surface. The photoemission study revealed a
                      Fano resonance shape of the curve with resonance and
                      antiresonance energies hv=151.8 and 146.8 eV, respectively.
                      The Gd 4f localized electrons contribute to the valence band
                      density of states located at 9.8 eV below the valence band
                      edge.},
      month         = {Jun},
      date          = {2008-06-15},
      organization  = {9th International School and Symposium
                       on Synchrotron Radiation in Natural
                       Science, Ameliowka (Poland), 15 Jun
                       2008 - 20 Jun 2008},
      cin          = {HASYLAB(-2012)},
      ddc          = {540},
      cid          = {$I:(DE-H253)HASYLAB_-2012_-20130307$},
      pnm          = {DORIS Beamline E1 (POF1-550) / DORIS Beamline BW2
                      (POF1-550)},
      pid          = {G:(DE-H253)POF1-E1-20130405 / G:(DE-H253)POF1-BW2-20130405},
      experiment   = {EXP:(DE-H253)D-E1-20150101 / EXP:(DE-H253)D-BW2-20150101},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000270692000006},
      doi          = {10.1016/j.radphyschem.2009.05.022},
      url          = {https://bib-pubdb1.desy.de/record/88058},
}