TY  - JOUR
AU  - Orlowski, B. A.
AU  - Kowalski, B. J.
AU  - Lusakowska, E.
AU  - Kowalik, I. A.
AU  - Pietrzyk, M.
AU  - Guziewicz, E.
AU  - Nossarzewska-Orlowska, E.
AU  - Johnson, R. L.
AU  - DESY
TI  - Microscopic and Resonant Photoemission study of Gd/Si(111) interface
JO  - Radiation physics and chemistry
VL  - 78
SN  - 0969-806X
CY  - Oxford [u.a.]
PB  - Pergamon Press
M1  - PHPPUBDB-10468
SP  - S22-S24
PY  - 2009
N1  - © Elsevier Ltd.; Post referee fulltext in progress 2; Embargo 12 months from publication
AB  - Atomic force microscopy (AFM) and Fano-type resonant photoemission spectroscopy (RPS) of Gd atoms deposited on Si(1 1 1) surface are presented. Layers of thicknesses 0.2, 2 and 15 nm were deposited under UHV conditions. Anomalously deep craters were observed on the Si(1 1 1) surface side of the interface below the Gd layer. We expect that anomalously high chemical activity of Gd and a dominating diffusion of Si atoms are responsible for the effect. Application of synchrotron radiation in the energy region hν corresponding to the Gd 4d–4f transition (140–170 eV) enabled Fano-type resonant photoemission spectra. Si(1 1 1) surface valence band spectra with contributions from Gd 4f electrons were detected for a 0.2-nm-thick Gd layer deposited onto a clean Si(1 1 1) surface. The photoemission study revealed a Fano resonance shape of the curve with resonance and antiresonance energies hv=151.8 and 146.8 eV, respectively. The Gd 4f localized electrons contribute to the valence band density of states located at 9.8 eV below the valence band edge.
T2  - 9th International School and Symposium on Synchrotron Radiation in Natural Science
CY  - 15 Jun 2008 - 20 Jun 2008, Ameliowka (Poland)
Y2  - 15 Jun 2008 - 20 Jun 2008
M2  - Ameliowka, Poland
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000270692000006
DO  - DOI:10.1016/j.radphyschem.2009.05.022
UR  - https://bib-pubdb1.desy.de/record/88058
ER  -