%0 Journal Article
%A Orlowski, B. A.
%A Kowalski, B. J.
%A Lusakowska, E.
%A Kowalik, I. A.
%A Pietrzyk, M.
%A Guziewicz, E.
%A Nossarzewska-Orlowska, E.
%A Johnson, R. L.
%A DESY
%T Microscopic and Resonant Photoemission study of Gd/Si(111) interface
%J Radiation physics and chemistry
%V 78
%@ 0969-806X
%C Oxford [u.a.]
%I Pergamon Press
%M PHPPUBDB-10468
%P S22-S24
%D 2009
%Z © Elsevier Ltd.; Post referee fulltext in progress 2; Embargo 12 months from publication
%X Atomic force microscopy (AFM) and Fano-type resonant photoemission spectroscopy (RPS) of Gd atoms deposited on Si(1 1 1) surface are presented. Layers of thicknesses 0.2, 2 and 15 nm were deposited under UHV conditions. Anomalously deep craters were observed on the Si(1 1 1) surface side of the interface below the Gd layer. We expect that anomalously high chemical activity of Gd and a dominating diffusion of Si atoms are responsible for the effect. Application of synchrotron radiation in the energy region hν corresponding to the Gd 4d–4f transition (140–170 eV) enabled Fano-type resonant photoemission spectra. Si(1 1 1) surface valence band spectra with contributions from Gd 4f electrons were detected for a 0.2-nm-thick Gd layer deposited onto a clean Si(1 1 1) surface. The photoemission study revealed a Fano resonance shape of the curve with resonance and antiresonance energies hv=151.8 and 146.8 eV, respectively. The Gd 4f localized electrons contribute to the valence band density of states located at 9.8 eV below the valence band edge.
%B 9th International School and Symposium on Synchrotron Radiation in Natural Science
%C 15 Jun 2008 - 20 Jun 2008, Ameliowka (Poland)
Y2 15 Jun 2008 - 20 Jun 2008
M2 Ameliowka, Poland
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000270692000006
%R 10.1016/j.radphyschem.2009.05.022
%U https://bib-pubdb1.desy.de/record/88058