000645014 001__ 645014
000645014 005__ 20260202210343.0
000645014 0247_ $$2datacite_doi$$a10.3204/PUBDB-2026-00537
000645014 037__ $$aPUBDB-2026-00537
000645014 041__ $$aEnglish
000645014 1001_ $$0P:(DE-H253)PIP1110344$$aDurkan, Stephen$$b0$$eCorresponding author$$gmale
000645014 245__ $$aLight Sources and Materials for EUV Lithography$$f2008-02-21 - 2008-02-27
000645014 260__ $$c2025
000645014 300__ $$a195
000645014 3367_ $$2DataCite$$aOutput Types/Dissertation
000645014 3367_ $$2ORCID$$aDISSERTATION
000645014 3367_ $$2BibTeX$$aPHDTHESIS
000645014 3367_ $$02$$2EndNote$$aThesis
000645014 3367_ $$0PUB:(DE-HGF)11$$2PUB:(DE-HGF)$$aDissertation / PhD Thesis$$bphd$$mphd$$s1770023389_3939692
000645014 3367_ $$2DRIVER$$adoctoralThesis
000645014 502__ $$aDissertation, Dublin City University, 2025$$bDissertation$$cDublin City University$$d2025
000645014 520__ $$aThe field of semiconductor manufacturing is heavily dependent on the process of photolithography. Photoresists undergo chemical changes when exposed to light, allowing for patterning of the silicon before other processing steps such as etching and ion implantation are performed. The current state of the art technology is Extreme Ultraviolet lithography. Light-matter interactions are critical to this field. They are exploited in two areas: the source of the EUV light, and in photoresist materials for the lithography itself. Currently, a tin laser produced plasma is used by industry as the light source, but in the past Free Electron Lasers were considered. Light-matter interactions, relevant to both fields, were studied in this project. A laser produced plasma based EUV light source was built in order to study the spatial and temporal characteristics of the light and plasma. The differences in using tungsten and tin as the source material were investigated. Spectral intensities on the order of 10^13 photons s^−1 nm^−1 sr^−1 at a wavelength of 13.6 nm (photon energy= 91.2 eV) were achieved with both materials. The interaction of intense EUV light with matter was also investigated through the analysis of multiphoton ionisation of neon at the EUVL photon energy of 93 eV, previously recorded at the FLASH FEL. Peak intensities on the order of 10^16 W.cm^−2 allowed for the detection of sequential one-plus-two photon double ionisation. EUVL resist candidates (e.g., nanoparticle and metal-inorganic based) demand strong EUV absorbers, namely metals. Relaxation dynamics of chromium-oxalate coordination compounds, previously reported as potential EUV resist candidates, were investigated with the aid of low temperature phosphorescence and time-resolved infrared spectroscopy. Excited state lifetimes ranging from milliseconds to picoseconds were revealed.
000645014 536__ $$0G:(DE-HGF)POF4-6G2$$a6G2 - FLASH (DESY) (POF4-6G2)$$cPOF4-6G2$$fPOF IV$$x0
000645014 536__ $$0G:(EU-Grant)226716$$aELISA - European Light Sources Activities - Synchrotrons and Free Electron Lasers (226716)$$c226716$$fFP7-INFRASTRUCTURES-2008-1$$x1
000645014 693__ $$0EXP:(DE-H253)F-BL3-20150101$$1EXP:(DE-H253)FLASH-20150101$$6EXP:(DE-H253)F-BL3-20150101$$aFLASH$$fFLASH Beamline BL3$$x0
000645014 7001_ $$0P:(DE-H253)PIP1007497$$aCostello, John$$b1$$eThesis advisor
000645014 8564_ $$uhttps://doras.dcu.ie/30937
000645014 8564_ $$uhttps://bib-pubdb1.desy.de/record/645014/files/SDurkan_Thesis_Final.pdf$$yOpenAccess
000645014 8564_ $$uhttps://bib-pubdb1.desy.de/record/645014/files/SDurkan_Thesis_Final.pdf?subformat=pdfa$$xpdfa$$yOpenAccess
000645014 909CO $$ooai:bib-pubdb1.desy.de:645014$$popenaire$$popen_access$$pdriver$$pVDB$$pec_fundedresources$$pdnbdelivery
000645014 9101_ $$0I:(DE-HGF)0$$6P:(DE-H253)PIP1110344$$aExternal Institute$$b0$$kExtern
000645014 9101_ $$0I:(DE-HGF)0$$6P:(DE-H253)PIP1007497$$aExternal Institute$$b1$$kExtern
000645014 9131_ $$0G:(DE-HGF)POF4-6G2$$1G:(DE-HGF)POF4-6G0$$2G:(DE-HGF)POF4-600$$3G:(DE-HGF)POF4$$4G:(DE-HGF)POF$$aDE-HGF$$bForschungsbereich Materie$$lGroßgeräte: Materie$$vFLASH (DESY)$$x0
000645014 9141_ $$y2025
000645014 915__ $$0StatID:(DE-HGF)0510$$2StatID$$aOpenAccess
000645014 915__ $$0LIC:(DE-HGF)CCBYNCND4$$2HGFVOC$$aCreative Commons Attribution-NonCommercial-NoDerivs CC BY-NC-ND 4.0
000645014 920__ $$lno
000645014 9201_ $$0I:(DE-H253)FS_DOOR-User-20241023$$kFS DOOR-User$$lFS DOOR-User$$x0
000645014 980__ $$aphd
000645014 980__ $$aVDB
000645014 980__ $$aUNRESTRICTED
000645014 980__ $$aI:(DE-H253)FS_DOOR-User-20241023
000645014 9801_ $$aFullTexts