%0 Journal Article
%A kalal, shailesh
%A Magnuson, Martin
%A Chesini, Alessandro
%A A, Akshaya
%A Honnali, Sanath Kumar
%A Sahoo, Sophia
%A Jain, Nakul
%A Bhattacharyya, Dibyendu
%A Gloskovskii, Andrei
%A Gupta, Mukul
%A Wang, Feng
%A Orlandi, Michele
%A Greczynski, Grzegorz
%A Järrendahl, Kenneth
%A Eklund, Per
%A Birch, Jens
%A Hsiao, Ching-Lien
%T Defect Engineering in Ti‐Doped Ta<sub>3</sub>N<sub>5</sub> Thin Films for Enhanced Photoelectrochemical Water Splitting: Electronic Structure Modulation and Charge Carrier Dynamics 
%J Small structures
%V 7
%N 1
%@ 2688-4062
%C Weinheim
%I Wiley-VCH
%M PUBDB-2026-00040
%P e202500504
%D 2026
%Z cc-by
%X Tantalum nitride (Ta<sub>3</sub>N<sub>5</sub>) is a promising semiconductor for solar-driven photoelectrochemical (PEC) water splitting, but its performance is limited by intrinsic defects. Here, we investigate the effect of titanium (Ti) doping (0–10 at
%F PUB:(DE-HGF)16
%9 Journal Article
%R 10.1002/sstr.202500504
%U https://bib-pubdb1.desy.de/record/643142