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@ARTICLE{Peng:640704,
      author       = {Peng, Jun and Hensel, Daniel and Venugopal, Rakshith and
                      Rave, Lucas and Schormann, Colin and Koch, Sebastian and
                      Blick, Robert and Zierold, Robert},
      title        = {{ALD}‐{A}ssisted {VO}$_2$ for {M}emristor {A}pplication},
      journal      = {Advanced engineering materials},
      volume       = {27},
      number       = {10},
      issn         = {1438-1656},
      address      = {Weinheim},
      publisher    = {Wiley-VCH Verl.},
      reportid     = {PUBDB-2025-04844},
      pages        = {2402614},
      year         = {2025},
      note         = {Robert Blick bis einschließlich 2025 in Teilen von FS
                      finanziert.},
      abstract     = {Vanadium dioxide (VO$_2$) is a well-known candidate for
                      memristor applications due to its insulator-to-metal
                      transition (IMT) characteristics. The fabrication of
                      memristor devices requires highly controlled synthesis
                      processes concerning the material chemistry and geometry.
                      Atomic layer deposition (ALD) offers unique advantages for
                      the fabrication of hardware neural networks, such as
                      miniaturization, conformality, and sub-nm thickness control.
                      Herein, an ALD process for non-stoichiometric vanadium oxide
                      (VO$_x$) using tetrakis(dimethylamino)vanadium (TDMAV) and
                      water as precursors is presented. Subsequently, a
                      tailor-made annealing process converts VO$_x$ into VO$_2$,
                      which exhibits an IMT of about three orders of magnitude at
                      around 70 °C, rendering it a promising memristor
                      material. VO$_2$ thin film and Si–Al$_2$O$_3$/VO$_2$
                      core/shell memristors are fabricated and analyzed, both of
                      which exhibited I–V hysteresis loops, indicating their
                      suitability for memristor applications in both 2D and 3D
                      morphologies. Additionally, these memristors are sensitive
                      to the operation temperature, with the hysteresis loops
                      narrowing and shifting toward lower voltages as temperature
                      increases, eventually disappearing beyond VO$_2$'s intrinsic
                      phase transition temperature. This study highlights the
                      viability of ALD-assisted VO$_2$ for memristor applications
                      and demonstrates its potential for advancing the
                      three-dimensionalization of neuromorphic chips.},
      cin          = {FS-PS},
      ddc          = {660},
      cid          = {I:(DE-H253)FS-PS-20131107},
      pnm          = {632 - Materials – Quantum, Complex and Functional
                      Materials (POF4-632) / DFG project G:(GEPRIS)192346071 - SFB
                      986: Maßgeschneiderte Multiskalige Materialsysteme - M3
                      (192346071)},
      pid          = {G:(DE-HGF)POF4-632 / G:(GEPRIS)192346071},
      experiment   = {EXP:(DE-MLZ)NOSPEC-20140101},
      typ          = {PUB:(DE-HGF)16},
      doi          = {10.1002/adem.202402614},
      url          = {https://bib-pubdb1.desy.de/record/640704},
}