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@ARTICLE{Streicher:639345,
      author       = {Streicher, Isabel and Wolff, Niklas and Duarte, Teresa and
                      Rehm, Oliver and Straňák, Patrik and Kirste, Lutz and
                      Prescher, Mario and Guo, Xuyun and Nicolosi, Valeria and
                      Baumgarten, Lutz and Mueller, Martina and Kienle, Lorenz and
                      Leone, Stefano},
      title        = {{A}dvancing the {G}rowth of {G}a{N} on {A}l{S}c{N} and
                      {A}l{YN} by {M}etal–{O}rganic {C}hemical {V}apor
                      {D}eposition},
      journal      = {Advanced physics research},
      volume       = {4},
      number       = {9},
      issn         = {2751-1200},
      address      = {Weinheim},
      publisher    = {Wiley-VCH GmbH},
      reportid     = {PUBDB-2025-04446},
      pages        = {e2500035},
      year         = {2025},
      note         = {N.W. acknowledges funding from the Deutsche
                      Forschungsgemeinschaft (DFG) under the framework of the
                      collaborative research center “CRC1261” and KiNSIS for
                      funding an external research visit.},
      abstract     = {High electron mobility transistors (HEMT) based on
                      Al1-xScxN/GaN and Al1-xYxN/GaN heterostructures promise
                      increased device performance and reliability due to the high
                      sheet charge carrier density and the possibility to grow
                      strain-free layers on GaN. Metal–organic chemical vapor
                      deposition (MOCVD) offers high throughput, high structural
                      quality, and good electrical characteristics. The growth of
                      GaN layers on Al1-xScxN and Al1-xYxN is challenging, but at
                      the same time crucial as passivation or for multichannel
                      structures. GaN is observed to grow three-dimensionally on
                      these nitrides, exposing not-passivated areas to surface
                      oxidation. In this work, growth of 2–20 nm-thick,
                      two-dimensional GaN layers is demonstrated. Optimization of
                      growth conditions is enabled by understanding island
                      formation on the atomic scale by aberration corrected
                      scanning transmission electron microscopy (STEM) and hard
                      X-ray photoelectron spectroscopy (HAXPES). Increased growth
                      temperature, an AlN interlayer, low supersaturation
                      conditions and the carrier gas are found to be key to
                      enhance Ga adatom mobility. Growth of single crystalline GaN
                      layers on Al1-xScxN and Al1-xYxN is unlocked and prevents
                      oxidation of the underlying layers. Few nanometer thick GaN
                      caps allow for depositing the gate metallization directly on
                      the cap, whereas thicker ones allow for the growth of
                      heterostructures for normally-off devices and multichannel
                      structures.},
      cin          = {DOOR ; HAS-User},
      ddc          = {530},
      cid          = {I:(DE-H253)HAS-User-20120731},
      pnm          = {6G3 - PETRA III (DESY) (POF4-6G3) / FS-Proposal: I-20230416
                      (I-20230416)},
      pid          = {G:(DE-HGF)POF4-6G3 / G:(DE-H253)I-20230416},
      experiment   = {EXP:(DE-H253)P-P22-20150101},
      typ          = {PUB:(DE-HGF)16},
      doi          = {10.1002/apxr.202500035},
      url          = {https://bib-pubdb1.desy.de/record/639345},
}