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@INPROCEEDINGS{MagalhaesSuarez:638687,
      author       = {Magalhaes Suarez, Debora and Hirsemann, Helmut and Klujev,
                      Alexander and Konopkova, Zuzana and Lange, Sabine and
                      Laurus, Torsten and Niemann, Magdalena and Palutke, Steffen
                      and Pennicard, David and Ramilli, Marco and Rovensky, Vratko
                      and Strohm, Cornelius and Sztuk-Dambietz, Jolanta and Trunk,
                      Ulrich and Veale, Matthew and Wilson, Matthew and Graafsma,
                      Heinz},
      title        = {{H}igh-{Z} sensors at {MH}z repetition rate {FEL}s: first
                      {AGIPD} results},
      journal      = {Journal of Instrumentation},
      volume       = {21},
      number       = {01},
      issn         = {1748-0221},
      address      = {London},
      publisher    = {Inst. of Physics},
      reportid     = {PUBDB-2025-04152},
      pages        = {C01019},
      year         = {2025},
      abstract     = {To address new applications in the 20–30 keV photon
                      energy range at the European XFEL, where silicon sensors
                      lose quantum efficiency, the AGIPD consortia has developed
                      anAGIPD detector prototype with high-Z sensor materials. An
                      electron-collecting version of the chip (ecAGIPD) was
                      designed to leverage from the higher mobility and longer
                      lifetime of electrons with respect to holes in the candidate
                      materials: chromium-doped gallium arsenide (GaAs:Cr) and
                      high-flux cadmium zinc telluride (CdZnTe). This work reports
                      on the characterization of GaAs and high-flux CdZnTe ecAGIPD
                      prototypes at the HED instrument at the European XFEL. Their
                      time response, linearity and performance at 2.2 and 4.5 MHz
                      frame rates were evaluated. Preliminary results demonstrate
                      good linearity of both materials up to 1.6e+03 15 keV
                      photons/mm2/pulse, and a residual after-pulse signal
                      corresponding to less than one photon on CdZnTe, up to an
                      estimated flux of 1.2e+05 24 keV photons/mm2/pulse.},
      month         = {Jul},
      date          = {2025-07-06},
      organization  = {International Workshop on Radiation
                       Imaging Detectors, Bratislava
                       (Slovakia), 6 Jul 2025 - 10 Jul 2025},
      cin          = {FS-DS / $XFEL_DO_DD_DET$ / $XFEL_E1_HED$},
      ddc          = {610},
      cid          = {I:(DE-H253)FS-DS-20120731 /
                      $I:(DE-H253)XFEL_DO_DD_DET-20210408$ /
                      $I:(DE-H253)XFEL_E1_HED-20210408$},
      pnm          = {622 - Detector Technologies and Systems (POF4-622) / HiBEF
                      - HIBEF Consortium $(2020_Join2-HiBEF)$},
      pid          = {G:(DE-HGF)POF4-622 / $G:(DE-HGF)2020_Join2-HiBEF$},
      experiment   = {EXP:(DE-H253)XFEL-HED-20150101},
      typ          = {PUB:(DE-HGF)16 / PUB:(DE-HGF)8},
      doi          = {10.1088/1748-0221/21/01/C01019},
      url          = {https://bib-pubdb1.desy.de/record/638687},
}