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| 001 | 637145 | ||
| 005 | 20250904212717.0 | ||
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| 100 | 1 | _ | |a Grigorian, Souren |0 P:(DE-H253)PIP1009828 |b 0 |e Corresponding author |
| 245 | _ | _ | |a In-operando characterizations of oligothiophene OFETs: controlling the structure-property relationships at the nanoscale |
| 260 | _ | _ | |a [New York] |c 2025 |b Springer US |
| 336 | 7 | _ | |a article |2 DRIVER |
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| 500 | _ | _ | |a Russische Institute beteiligt! |
| 520 | _ | _ | |a Grazing Incident Wide Angle X-ray Scattering (GIWAXS) studies on organic field-effect transistors (OFETs) fabricated with an aliphatic functionalized α,α'-quinquethiophene (i.e. 5,5′′′′-dihexyl-2,2′:5′,2′′:5′′,2′′′:5′′′,2′′′′-quinquethiophene, DH5T) thin film, were carried out. The structure-property relationships of the semiconductor material were investigated. A detailed, spatially resolved microstructural characterization of the active layer was carried out with the aim of understanding the role of the film’s microstructure on electrical performance. For this purpose, a custom-made setup designed for in-operando tests of OFETs was used, allowing a correlation under measured conditions of the complex microstructure with the thin film electrical behavior, under operating conditions. The GIWAXS measurements revealed a significant anisotropy of the DH5T thin films, under source-drain applied voltages (V$_{sd}$). Particularly notable variations were observed for both in-plane and out-of-plane directions. Upon applying the Vsd, the microstructure remained relatively stable in the out-of-plane (001) direction, suggesting that this orientation is less affected by the applied voltages. However, in the in-plane (020) direction, an increase of the $π–π$ stacking of the DH5T molecules was found, indicating a stronger response of the microstructure to the applied voltage. Notably, a higher tensile strain, exceeding 1%, was observed at a V$_{sd}$ of − 10 V, suggesting that the application of voltage induces significant structural reorganization in the thin film, which may have implications for optimizing the performance of OFETs in practical applications. |
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