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@ARTICLE{Grigorian:637145,
      author       = {Grigorian, Souren and Davydok, Anton and Grodd, Linda and
                      Luponosov, Yuriy and Ponomarenko, Sergey and Fratoddi,
                      Ilaria},
      title        = {{I}n-operando characterizations of oligothiophene {OFET}s:
                      controlling the structure-property relationships at the
                      nanoscale},
      journal      = {Discover nano},
      volume       = {20},
      number       = {1},
      issn         = {1556-276X},
      address      = {[New York]},
      publisher    = {Springer US},
      reportid     = {PUBDB-2025-03778},
      pages        = {138},
      year         = {2025},
      note         = {Russische Institute beteiligt!},
      abstract     = {Grazing Incident Wide Angle X-ray Scattering (GIWAXS)
                      studies on organic field-effect transistors (OFETs)
                      fabricated with an aliphatic functionalized
                      α,α'-quinquethiophene (i.e.
                      5,5′′′′-dihexyl-2,2′:5′,2′′:5′′,2′′′:5′′′,2′′′′-quinquethiophene,
                      DH5T) thin film, were carried out. The structure-property
                      relationships of the semiconductor material were
                      investigated. A detailed, spatially resolved microstructural
                      characterization of the active layer was carried out with
                      the aim of understanding the role of the film’s
                      microstructure on electrical performance. For this purpose,
                      a custom-made setup designed for in-operando tests of OFETs
                      was used, allowing a correlation under measured conditions
                      of the complex microstructure with the thin film electrical
                      behavior, under operating conditions. The GIWAXS
                      measurements revealed a significant anisotropy of the DH5T
                      thin films, under source-drain applied voltages (V$_{sd}$).
                      Particularly notable variations were observed for both
                      in-plane and out-of-plane directions. Upon applying the Vsd,
                      the microstructure remained relatively stable in the
                      out-of-plane (001) direction, suggesting that this
                      orientation is less affected by the applied voltages.
                      However, in the in-plane (020) direction, an increase of the
                      $π–π$ stacking of the DH5T molecules was found,
                      indicating a stronger response of the microstructure to the
                      applied voltage. Notably, a higher tensile strain, exceeding
                      1\%, was observed at a V$_{sd}$ of − 10 V, suggesting
                      that the application of voltage induces significant
                      structural reorganization in the thin film, which may have
                      implications for optimizing the performance of OFETs in
                      practical applications.},
      cin          = {DOOR ; HAS-User / Hereon},
      ddc          = {620},
      cid          = {I:(DE-H253)HAS-User-20120731 / I:(DE-H253)Hereon-20210428},
      pnm          = {6G3 - PETRA III (DESY) (POF4-6G3)},
      pid          = {G:(DE-HGF)POF4-6G3},
      experiment   = {EXP:(DE-H253)P-P03-20150101},
      typ          = {PUB:(DE-HGF)16},
      doi          = {10.1186/s11671-025-04332-5},
      url          = {https://bib-pubdb1.desy.de/record/637145},
}