TY  - JOUR
AU  - Grigorian, Souren
AU  - Davydok, Anton
AU  - Grodd, Linda
AU  - Luponosov, Yuriy
AU  - Ponomarenko, Sergey
AU  - Fratoddi, Ilaria
TI  - In-operando characterizations of oligothiophene OFETs: controlling the structure-property relationships at the nanoscale
JO  - Discover nano
VL  - 20
IS  - 1
SN  - 1556-276X
CY  - [New York]
PB  - Springer US
M1  - PUBDB-2025-03778
SP  - 138
PY  - 2025
N1  - Russische Institute beteiligt! 
AB  - Grazing Incident Wide Angle X-ray Scattering (GIWAXS) studies on organic field-effect transistors (OFETs) fabricated with an aliphatic functionalized α,α'-quinquethiophene (i.e. 5,5′′′′-dihexyl-2,2′:5′,2′′:5′′,2′′′:5′′′,2′′′′-quinquethiophene, DH5T) thin film, were carried out. The structure-property relationships of the semiconductor material were investigated. A detailed, spatially resolved microstructural characterization of the active layer was carried out with the aim of understanding the role of the film’s microstructure on electrical performance. For this purpose, a custom-made setup designed for in-operando tests of OFETs was used, allowing a correlation under measured conditions of the complex microstructure with the thin film electrical behavior, under operating conditions. The GIWAXS measurements revealed a significant anisotropy of the DH5T thin films, under source-drain applied voltages (V<sub>sd</sub>). Particularly notable variations were observed for both in-plane and out-of-plane directions. Upon applying the Vsd, the microstructure remained relatively stable in the out-of-plane (001) direction, suggesting that this orientation is less affected by the applied voltages. However, in the in-plane (020) direction, an increase of the π–π stacking of the DH5T molecules was found, indicating a stronger response of the microstructure to the applied voltage. Notably, a higher tensile strain, exceeding 1
LB  - PUB:(DE-HGF)16
DO  - DOI:10.1186/s11671-025-04332-5
UR  - https://bib-pubdb1.desy.de/record/637145
ER  -