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000637145 0247_ $$2datacite_doi$$a10.3204/PUBDB-2025-03778
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000637145 1001_ $$0P:(DE-H253)PIP1009828$$aGrigorian, Souren$$b0$$eCorresponding author
000637145 245__ $$aIn-operando characterizations of oligothiophene OFETs: controlling the structure-property relationships at the nanoscale
000637145 260__ $$a[New York]$$bSpringer US$$c2025
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000637145 520__ $$aGrazing Incident Wide Angle X-ray Scattering (GIWAXS) studies on organic field-effect transistors (OFETs) fabricated with an aliphatic functionalized α,α'-quinquethiophene (i.e. 5,5′′′′-dihexyl-2,2′:5′,2′′:5′′,2′′′:5′′′,2′′′′-quinquethiophene, DH5T) thin film, were carried out. The structure-property relationships of the semiconductor material were investigated. A detailed, spatially resolved microstructural characterization of the active layer was carried out with the aim of understanding the role of the film’s microstructure on electrical performance. For this purpose, a custom-made setup designed for in-operando tests of OFETs was used, allowing a correlation under measured conditions of the complex microstructure with the thin film electrical behavior, under operating conditions. The GIWAXS measurements revealed a significant anisotropy of the DH5T thin films, under source-drain applied voltages (V$_{sd}$). Particularly notable variations were observed for both in-plane and out-of-plane directions. Upon applying the Vsd, the microstructure remained relatively stable in the out-of-plane (001) direction, suggesting that this orientation is less affected by the applied voltages. However, in the in-plane (020) direction, an increase of the $π–π$ stacking of the DH5T molecules was found, indicating a stronger response of the microstructure to the applied voltage. Notably, a higher tensile strain, exceeding 1%, was observed at a V$_{sd}$ of − 10 V, suggesting that the application of voltage induces significant structural reorganization in the thin film, which may have implications for optimizing the performance of OFETs in practical applications.
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000637145 7001_ $$0P:(DE-H253)PIP1011657$$aDavydok, Anton$$b1
000637145 7001_ $$0P:(DE-H253)PIP1011879$$aGrodd, Linda$$b2
000637145 7001_ $$0P:(DE-HGF)0$$aLuponosov, Yuriy$$b3
000637145 7001_ $$0P:(DE-HGF)0$$aPonomarenko, Sergey$$b4
000637145 7001_ $$0P:(DE-H253)PIP1109748$$aFratoddi, Ilaria$$b5
000637145 773__ $$0PERI:(DE-600)2253244-4$$a10.1186/s11671-025-04332-5$$gVol. 20, no. 1, p. 138$$n1$$p138$$tDiscover nano$$v20$$x1556-276X$$y2025
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