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@ARTICLE{Margolin:633171,
      author       = {Margolin, Ilya and Korostylev, Evgeny and Kalika, Elizaveta
                      and Negrov, Dmitrii and Chouprik, Anastasia},
      title        = {{S}tructural changes during wake-up and polarization
                      switching in a ferroelectric {H}f$_{0.5}${Z}r$_{0.5}${O}$_2$
                      film},
      journal      = {Acta materialia},
      volume       = {284},
      issn         = {1359-6454},
      address      = {Amsterdam [u.a.]},
      publisher    = {Elsevier Science},
      reportid     = {PUBDB-2025-02367},
      pages        = {120590},
      year         = {2025},
      note         = {Waiting for fulltext},
      abstract     = {Ferroelectric polycrystalline hafnium oxide films hold
                      great promise for the electronics industry, though an
                      understanding of ferroelectricity in this unconventional
                      material is still lacking. Here, by an in situ synchrotron
                      X-ray microdiffraction experiment, we reveal an important
                      role of reversible and irreversible ferroelastic switching
                      in the mechanism of polarization reversal in a 10 nm thick
                      Hf$_{0.5}$Zr$_{0.5}$O$_2$ film and in the origin of the so
                      called wake-up effect consisting in a gradual increase in
                      the remanent polarization of as-prepared memory structures.
                      During the wake-up, the oblique polar axis irreversibly
                      rotates in some ferroelectric orthorhombic grains and
                      becomes more vertical on average in the film, which is the
                      mechanism of the increase in measured polarization. This
                      effect originates from the tensile stress emerging in the
                      film during crystallization annealing and its gradual
                      decrease via the rearrangement of the crystal lattice, which
                      is consistent with first-principles calculations. In the
                      woken-up structures, the polar axis also rotates during
                      polarization switching, but reversibly, which means a
                      different crystal structure of Hf$_{0.5}$Zr$_{0.5}$O$_2$ in
                      the upward and downward polarization states and breaking the
                      inversion symmetry. The results provide insight into
                      fundamentals of ferroelectric hafnium oxide and points the
                      way for intelligent material engineering in the field of
                      ferroelectrics-based devices.},
      cin          = {DOOR ; HAS-User},
      ddc          = {670},
      cid          = {I:(DE-H253)HAS-User-20120731},
      pnm          = {6G3 - PETRA III (DESY) (POF4-6G3) / FS-Proposal: I-20190533
                      (I-20190533)},
      pid          = {G:(DE-HGF)POF4-6G3 / G:(DE-H253)I-20190533},
      experiment   = {EXP:(DE-H253)P-P23-20150101},
      typ          = {PUB:(DE-HGF)16},
      doi          = {10.1016/j.actamat.2024.120590},
      url          = {https://bib-pubdb1.desy.de/record/633171},
}