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000626497 1001_ $$0P:(DE-HGF)0$$aLevcenko, Sergiu$$b0$$eCorresponding author
000626497 245__ $$aRole of sample thickness and self-absorption effects in simultaneous XEOL-XAS measurements on single crystalline ZnO and GaN
000626497 260__ $$aCollege Park, MD$$bAPS$$c2025
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000626497 520__ $$aThe x-ray excited optical luminescence (XEOL) for defect and near band edge (NBE) transitions combinedwith simultaneous x-ray absorption measurements are experimentally and theoretically studied on single crystalline ZnO and GaN across the Zn and Ga K edges, respectively, in a wide range of sample thicknesses.Increasing the sample thickness leads to the appearance of an inverted line shape and negative edge jump forthe XEOL defect response, whereas the line shape of the XEOL NBE edge remains positive. A one-dimensionaltransport model is developed, which includes experimental geometry, the creation of x-ray generated excitations,diffusion and recombination of the carriers, and reabsorption of x-ray fluorescence and XEOL photons. Themodel calculations reproduce the experimentally observed changes of the edge shape in the XEOL spectra causedby variation of the sample thickness and reveal surface recombination and optical absorption as the main factorsdetermining the XEOL edge shape for a given sample thickness.
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000626497 536__ $$0G:(DE-Ds200)BMBF-05K19OL1$$a05K19OL1 - Identifizierung von Defekten durch elementspezifische Anregung optischer Lumineszenz (BMBF-05K19OL1)$$cBMBF-05K19OL1$$f05K19OL1$$x4
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000626497 7001_ $$0P:(DE-H253)PIP1028577$$aRitter, Konrad$$b1
000626497 7001_ $$0P:(DE-H253)PIP1091979$$aFalk, Hans$$b2
000626497 7001_ $$0P:(DE-H253)PIP1093496$$aPfeiffelmann, Timo$$b3
000626497 7001_ $$00000-0002-2222-9602$$aTrefflich, Lukas$$b4
000626497 7001_ $$0P:(DE-H253)PIP1001273$$aWelter, Edmund$$b5
000626497 7001_ $$0P:(DE-H253)PIP1087552$$aGrundmann, Marius$$b6
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000626497 773__ $$0PERI:(DE-600)3004165-X$$a10.1103/PhysRevResearch.7.023066$$gVol. 7, no. 2, p. 023066$$n2$$p023066$$tPhysical review research$$v7$$x2643-1564$$y2025
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