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@INPROCEEDINGS{Davis:626193,
      author       = {Davis, Naomi and Arling, Jan-Hendrik and Baselga, Marta and
                      Diehl, Leena and Dingfelder, Jochen and Gregor, Ingrid-Maria
                      and Hauser, Marc and Hügging, Fabian and Jakobs, Karl and
                      Karagounis, Michael and Koppenhöfer, Roland and Kröninger,
                      Kevin and Lex, Fabian and Parzefall, Ulrich and Sari, Birkan
                      and Sorgenfrei, Niels and Spannagel, Simon and Sperlich,
                      Dennis and Velyka, Anastasiia and Weingarten, Jens and Wei,
                      Yingjie and Zatocilova, Iveta},
      title        = {{S}imulation of {CMOS} strip sensors},
      journal      = {Nuclear instruments $\&$ methods in physics research /
                      Section A},
      volume       = {1080},
      issn         = {0167-5087},
      address      = {[Amsterdam]},
      publisher    = {Elsevier},
      reportid     = {PUBDB-2025-01333},
      pages        = {170807},
      year         = {2025},
      abstract     = {In high-energy physics, there is a need to investigate
                      silicon sensor concepts that offer large-area coverage and
                      cost-efficiency for particle tracking detectors. Sensors
                      based on CMOS imaging technology present a promising
                      alternative silicon sensor concept. As this technology
                      follows an industry process, it can lower sensor production
                      costs and enable fast and large-scale production from
                      various vendors. The CMOS strips project investigates
                      passive CMOS strip sensors fabricated by LFoundry in a 150nm
                      technology. The stitching technique was employed to develop
                      two different strip sensor formats. The strip implant layout
                      varies in doping concentration and width, allowing the study
                      of various depletion concepts and electric field
                      configurations. The performance of the first CMOS strip
                      sensor prototype was evaluated based on several test beam
                      campaigns conducted at the DESY II Test Beam Facility. In
                      order to understand and validate the test beam data results,
                      the detector response was simulated. This study shows how
                      performance differences of the various strip sensor layouts
                      can be investigated using Monte Carlo methods combined with
                      TCAD Device simulations. In particular, the detector
                      response simulated with Allpix2 is presented and compared to
                      test beam data.},
      month         = {Feb},
      date          = {2025-02-17},
      organization  = {Proceedings of the Vienna Conference
                       on Instrumentation, Vienna (Austria),
                       17 Feb 2025 - 21 Feb 2025},
      keywords     = {CMOS (autogen) / Silicon strip sensors (autogen) / Test
                      beam (autogen) / TCAD (autogen) / Allpix (autogen) / Monte
                      Carlo simulation (autogen)},
      cin          = {ATLAS},
      ddc          = {530},
      cid          = {I:(DE-H253)ATLAS-20120731},
      pnm          = {622 - Detector Technologies and Systems (POF4-622)},
      pid          = {G:(DE-HGF)POF4-622},
      experiment   = {EXP:(DE-H253)TestBeamline22-20150101},
      typ          = {PUB:(DE-HGF)16 / PUB:(DE-HGF)8},
      doi          = {10.1016/j.nima.2025.170807},
      url          = {https://bib-pubdb1.desy.de/record/626193},
}