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@PHDTHESIS{Simancas:622273,
      author       = {Simancas, Adriana},
      othercontributors = {Spannagel, Simon and Gregor, Ingrid-Maria},
      title        = {{TCAD} {S}imulations and {T}est {B}eam {C}haracterization
                      of {MAPS} for {F}uture {L}epton {C}olliders},
      school       = {University of Bonn},
      type         = {Dissertation},
      reportid     = {PUBDB-2025-00311},
      pages        = {124},
      year         = {2025},
      note         = {Dissertation, University of Bonn, 2024},
      abstract     = {Monolithic active pixel sensors (MAPS) produced in a 65 nm
                      CMOS imaging technology are being investigated for
                      applications in particle physics. The MAPS design has a
                      small collection electrode with an input capacitance of ~fF,
                      granting a high signal-to-noise ratio and low power
                      consumption. Additionally, compared to previously studied
                      technologies, the 65 nm CMOS imaging technology reduces
                      material budget and improves the readout logic density.
                      Given these features, this technology is employed in the
                      TANGERINE project to develop the next generation of silicon
                      pixel sensors. The sensor design targets temporal and
                      spatial resolutions compatible with the requirements for a
                      vertex detector at future lepton colliders. By fulfilling
                      these requirements, the detector is also suitable as a
                      telescope plane for the DESY-II Test Beam facility.
                      Simulations and test-beam characterization of technology
                      demonstrators have been carried out in close collaboration
                      with the CERN EP $R\&D$ program and the ALICE ITS3 upgrade.
                      TCAD device simulations and Monte Carlo simulations have
                      been used to study detector sensing characteristics and
                      predict its performance parameters. This work presents a
                      technology-independent simulation approach that uses generic
                      doping profiles for TCAD simulations. The results agree
                      qualitatively with previous studies, providing a preliminary
                      validation of the simulation approach. Prototypes of a 65 nm
                      CMOS MAPS with a small collection electrode have been
                      characterized in laboratory and test-beam facilities by
                      studying performance parameters such as cluster size, charge
                      collection, spatial resolution, and detection efficiency.
                      This work presents the test beam results for different
                      sensor designs and bias configurations. The results are
                      consistent with studies of the previous technologies,
                      proving the scalability of sensor designs from 180 nm to 65
                      nm technology and offering perspectives on the necessary
                      compromises to accomplish the ultimate detector goals.
                      Finally, Monte Carlo simulations using TCAD electric fields
                      generated in this thesis have produced performance
                      parameters comparable to experimental data. The comparisons
                      demonstrate that the simulation approach is progressing in
                      the right direction. Discrepancies between the two highlight
                      the need to perform studies on the substrate and epitaxial
                      layer doping concentration to allow for accurate predictions
                      of the detector sensing properties. This thesis showcases
                      MAPS in a 65 nm CMOS imaging technology as a promising
                      candidate for a vertex detector at future lepton colliders
                      and provides valuable insight for refining the simulation
                      approach.},
      cin          = {ATLAS / FTX / FHTestBeam / FEC},
      cid          = {I:(DE-H253)ATLAS-20120731 / I:(DE-H253)FTX-20210408 /
                      I:(DE-H253)FHTestBeam-20150203 / I:(DE-H253)FEC-20120731},
      pnm          = {622 - Detector Technologies and Systems (POF4-622) /
                      Tangerine - Towards Next Generation Silicon Detectors
                      (innovation pool) (Tangerine) / AIDAinnova - Advancement and
                      Innovation for Detectors at Accelerators (101004761)},
      pid          = {G:(DE-HGF)POF4-622 / G:(DE-Ds200)Tangerine /
                      G:(EU-Grant)101004761},
      experiment   = {EXP:(DE-H253)TestBeamline22-20150101},
      typ          = {PUB:(DE-HGF)11},
      urn          = {urn:nbn:de:hbz:5-80379},
      url          = {https://bib-pubdb1.desy.de/record/622273},
}