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@ARTICLE{Losero:622200,
author = {Losero, Elena and Goblot, Valentin and Zhu, Yuchun and
Babashah, Hossein and Boureau, Victor and Burkart, Florian
and Galland, Christophe},
title = {{C}reation of {NV} {C}enters in {D}iamond under 155 {M}e{V}
{E}lectron {I}rradiation},
journal = {Advanced physics research},
volume = {3},
number = {2},
issn = {2751-1200},
address = {Weinheim},
publisher = {Wiley-VCH GmbH},
reportid = {PUBDB-2025-00238, arXiv:2305.15009},
pages = {2300071},
year = {2024},
abstract = {Single-crystal diamond substrates presenting a high
concentration of negatively charged nitrogen-vacancy centers
(NV−) are on high demand for the development of optically
pumped solid-state sensors such as magnetometers,
thermometers, or electrometers. While nitrogen impurities
can be easily incorporated during crystal growth, the
creation of vacancies requires further treatment. Electron
irradiation and annealing is often chosen in this context,
offering advantages with respect to irradiation by heavier
particles that negatively affect the crystal lattice
structure and consequently the NV− optical and spin
properties. A thorough investigation of electron irradiation
possibilities is needed to optimize the process and improve
the sensitivity of NV-based sensors. In this work, the
effect of electron irradiation is examined in a previously
unexplored regime: extremely high energy electrons, at 155
MeV. A simulation model is developed to estimate the
concentration of created vacancies and an increase of NV−
concentration by more than three orders of magnitude
following irradiation of a nitrogen-rich HPHT diamond over a
very large sample volume is experimentally demonstrated,
which translates into an important gain in sensitivity.
Moreover, the impact of electron irradiation in this
peculiar regime on other figures of merits relevant for NV
sensing is discussed, including charge state conversion
efficiency and spin relaxation time. Finally, the effect of
extremely high energy irradiation is compared with the more
conventional low energy irradiation process, employing 200
keV electrons from a transmission electron microscope, for
different substrates and irradiation fluences, evidencing
60-fold higher yield of vacancy creation per electron at 155
MeV.},
keywords = {diamond (autogen) / electron irradiation (autogen) /
NV-centers (autogen) / quantum sensing (autogen)},
cin = {MIL},
ddc = {530},
cid = {I:(DE-H253)MIL-20240919},
pnm = {621 - Accelerator Research and Development (POF4-621) /
EPFLinnovators - The launch of a new industrial PhD
programme at EPFL (754354)},
pid = {G:(DE-HGF)POF4-621 / G:(EU-Grant)754354},
experiment = {EXP:(DE-MLZ)NOSPEC-20140101},
typ = {PUB:(DE-HGF)16},
eprint = {2305.15009},
howpublished = {arXiv:2305.15009},
archivePrefix = {arXiv},
SLACcitation = {$\%\%CITATION$ = $arXiv:2305.15009;\%\%$},
UT = {WOS:001283293800003},
doi = {10.1002/apxr.202300071},
url = {https://bib-pubdb1.desy.de/record/622200},
}