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@INPROCEEDINGS{Maffessanti:617825,
      author       = {Maffessanti, Stefano and Hansen, Karsten and Kalavakuru, P.
                      and Reckleben, C. and Aschauer, S. and Castoldi, A. and
                      Fiorini, C. and Fischer, Peter and Porro, M.},
      title        = {{N}oise {A}nalysis of the {CMOS}-{DEPFET} {F}ront-{E}nd of
                      the {DSSC} {I}mager},
      publisher    = {IEEE},
      reportid     = {PUBDB-2024-07086},
      pages        = {1},
      year         = {2024},
      comment      = {2024 IEEE Nuclear Science Symposium (NSS), Medical Imaging
                      Conference (MIC) and Room Temperature Semiconductor Detector
                      Conference (RTSD) : [Proceedings] - IEEE, 2024. - ISBN
                      979-8-3503-8815-2 -
                      doi:10.1109/NSS/MIC/RTSD57108.2024.10655767},
      booktitle     = {2024 IEEE Nuclear Science Symposium
                       (NSS), Medical Imaging Conference (MIC)
                       and Room Temperature Semiconductor
                       Detector Conference (RTSD) :
                       [Proceedings] - IEEE, 2024. - ISBN
                       979-8-3503-8815-2 -
                       doi:10.1109/NSS/MIC/RTSD57108.2024.10655767},
      abstract     = {The DEPFET sensor with signal compression (DSSC) is a
                      1-megapixel imager developed for the European XFEL. It is
                      designed to detect X-rays with photon energies between 250
                      eV and 6 keV, and provides a peak frame-rate of 4.5 MHz. The
                      smallest independent unit of the detector, called module, is
                      composed by two sensors, forming a matrix of 512 by 128
                      active DEPFET pixels, bump-bonded to 16 readout ASICs. The
                      in-pixel electronics comprises a trapezoidal-shaping filter
                      with programmable gain and timing, an ADC with finely
                      tunable gain and offset, and an 800-word long memory. The
                      characterization of the first CMOS-DEPFET based prototype
                      modules showed equivalent noise charge (ENC) better than
                      10e−rms at megahertz frame-rate and room temperature. In
                      this work, we present the results of a measurement campaign
                      carried out to disentangle the noise contributions of the
                      acquisition chain. We exploited the front-end capabilities
                      and measured the ENC using the knife-edge method, varying
                      the gain of single stages at a time. The measured ENC vs
                      gain were fitted and the gain-dependent and -independent
                      components extracted, and the contributions at key points of
                      the acquisition chain presented.},
      month         = {Oct},
      date          = {2024-10-26},
      organization  = {2024 IEEE Nuclear Science Symposium
                       (NSS), Medical Imaging Conference (MIC)
                       and Room Temperature Semiconductor
                       Detector Conference (RTSD), Tampa (FL),
                       26 Oct 2024 - 2 Nov 2024},
      cin          = {FEC},
      cid          = {I:(DE-H253)FEC-20120731},
      pnm          = {622 - Detector Technologies and Systems (POF4-622)},
      pid          = {G:(DE-HGF)POF4-622},
      experiment   = {EXP:(DE-MLZ)NOSPEC-20140101},
      typ          = {PUB:(DE-HGF)8 / PUB:(DE-HGF)7},
      doi          = {10.1109/NSS/MIC/RTSD57108.2024.10655767},
      url          = {https://bib-pubdb1.desy.de/record/617825},
}