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000616419 245__ $$aAtomically Smooth Fully Hydroxylated CeO2(001) Films on YSZ(001)
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000616419 520__ $$aCeO2 is an important support material with redox properties interesting for heterogeneouscatalysis and energy conversion applications. Here, we present a facile growth procedurefor epitaxial CeO2(0 0 1) thin films supported by YSZ(0 0 1) suitable for combined catalyticactivity and structural investigations. The growth of the CeO2 thin films was performedusing standard ultra-high-vacuum (UHV) preparation techniques followed by tube furnaceannealing in air. Thorough characterization prior to and after the tube furnace annealingrevealed that this step induces significant restructuring of the film. Complete characterizationby atomic force microscopy (AFM), X-ray reflectivity (XRR), grazing incidence X-raydiffraction (GIXRD), cross-section high-resolution scanning tunneling electron microscopy(HR-STEM), X-ray photo-emission spectroscopy (XPS), and polarization-resolved infraredreflection absorption spectroscopy (IRRAS) showed that the film is fully oxidized and atomicallysmooth with a coherent crystal lattice over the full film thickness. A dislocation networkat the CeO2/YSZ interface compensates the lattice mismatch between film and the YSZ support,yielding a film with bulk lattice parameters. The bulk terminated surface is found tobe defect free with negligible amount of adsorption sites and stabilized by the presence ofhydroxyl groups for polarity compensation.
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000616419 7001_ $$0P:(DE-H253)PIP1090045$$aBeck, Esko Erik$$b1
000616419 7001_ $$0P:(DE-H253)PIP1099476$$aKao, Ming-Chao$$b2
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000616419 7001_ $$0P:(DE-HGF)0$$aWang, Yuemin$$b13
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000616419 7001_ $$0P:(DE-HGF)0$$aEggeler, Yolita$$b15
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