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@ARTICLE{Wennlf:616022,
author = {Wennlöf, Håkan and Dannheim, Dominik and Viera, Manuel
Del Rio and Dort, Katharina and Eckstein, Doris and King,
Finn and Gregor, Ingrid-Maria and Huth, Lennart and Lachnit,
Stephan and Mendes, Larissa and Rastorguev, Daniil and Daza,
Sara Ruiz and Schütze, Paul and Simancas, Adriana and
Snoeys, Walter and Spannagel, Simon and Stanitzki, Marcel
and Tomal, Alessandra and Velyka, Anastasiia and Vignola,
Gianpiero},
title = {{S}imulating {M}onolithic {A}ctive {P}ixel {S}ensors: {A}
{T}echnology-{I}ndependent {A}pproach {U}sing {G}eneric
{D}oping {P}rofiles},
reportid = {PUBDB-2024-06315, arXiv:2408.00027},
year = {2024},
note = {22 pages, 25 figures, submitted to Nuclear Instruments and
Methods in Physics Research, Section A},
abstract = {The optimisation of the sensitive region of CMOS sensors
with complex non-uniform electric fields requires precise
simulations, and this can be achieved by a combination of
electrostatic field simulations and Monte Carlo methods.
This paper presents the guiding principles of such
simulations, using a CMOS pixel sensor with a small
collection electrode and a high-resistivity epitaxial layer
as an example. The full simulation workflow is described,
along with possible pitfalls and how to avoid them. For
commercial CMOS processes, detailed doping profiles are
confidential, but the presented method provides an
optimisation tool that is sufficiently accurate to
investigate sensor behaviour and trade-offs of different
sensor designs without knowledge of proprietary information.
The workflow starts with detailed electric field finite
element method simulations in TCAD, using generic doping
profiles. Examples of the effect of varying different
parameters of the simulated sensor are shown, as well as the
creation of weighting fields, and transient pulse
simulations. The fields resulting from TCAD simulations can
be imported into the Allpix Squared Monte Carlo simulation
framework, which enables high-statistics simulations,
including modelling of stochastic fluctuations from the
underlying physics processes of particle interaction.
Example Monte Carlo simulation setups are presented and the
different parts of a simulation chain are described.
Simulation studies from small collection electrode CMOS
sensors are presented, and example results are shown for
both single sensors and multiple sensors in a test beam
telescope configuration. The studies shown are those
typically performed on sensor prototypes in test beam
campaigns, and a comparison is made to test beam data,
showing a maximum deviation of $4\%$ and demonstrating that
the approach is viable for generating realistic results.},
cin = {ATLAS},
cid = {I:(DE-H253)ATLAS-20120731},
pnm = {611 - Fundamental Particles and Forces (POF4-611) /
AIDAinnova - Advancement and Innovation for Detectors at
Accelerators (101004761)},
pid = {G:(DE-HGF)POF4-611 / G:(EU-Grant)101004761},
experiment = {EXP:(DE-H253)LHC-Exp-ATLAS-20150101},
typ = {PUB:(DE-HGF)25},
eprint = {2408.00027},
howpublished = {arXiv:2408.00027},
archivePrefix = {arXiv},
SLACcitation = {$\%\%CITATION$ = $arXiv:2408.00027;\%\%$},
doi = {10.3204/PUBDB-2024-06315},
url = {https://bib-pubdb1.desy.de/record/616022},
}